Effects of high-pressure H 2O-annealing on amorphous IGZO thin-film transistors

Hyun Soo Shin, You Seung Rim, Yeon Gon Mo, Chaun Gi Choi, Hyun Jae Kim

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22 Citations (Scopus)


The effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The fabricated device annealed at 5atm in H 2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source-drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge-trapping sites at in- and bottom-ESLs due to defect passivation with the aid of high-pressure thermal annealing at 5atm in H 2O ambient.

Original languageEnglish
Pages (from-to)2231-2234
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number9
Publication statusPublished - 2011 Sept

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Surfaces and Interfaces


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