Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

G. Glass; H. Kim; M. R. Sardela; Q. Lu; J. R.A. Carlsson; J. R. Abelson; J. E. Greene

doi:10.1016/S0039-6028(97)00708-5

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

G. Glass, H. Kim, M. R. Sardela, Q. Lu, J. R.A. Carlsson, J. R. Abelson, J. E. Greene

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Si(001) layers doped with B concentrations C_B ranging from 5 x 10¹⁶ to 2 x 10²¹ cm^-3 were grown on Si(001)-(2 x 1) substrates by gas-source molecular beam epitaxy using Si₂H₆ and B₂H₆. B was incorporated into substitutional electrically active sites at concentrations up to 2.5 x 10²⁰ cm^-3. With increasing incident flux ratios J^B2H6/J_Si2H6≥0.01 (corresponding to C_B = 2 x 10¹⁹ cm^-3), film growth rates decreased at T_s≥600°C, but increased at T_s≤550°C. Deuterium temperature-programmed desorption measurements as a function of increasing C_B show strong B surface segregation, decreased steady-state H coverages θ_H, and lower dangling bond densities. The Si:B growth kinetics are well described by a model showing that at low temperatures, where steady-state θ_H values are high, increased H desorption rates from B-backbonded Si adatoms dominate, leading to an enhancement in R_Si, whereas at higher temperatures R_Si decreases due to the decreased adsorption-site density.

Original language	English
Pages (from-to)	L63-L68
Journal	Surface Science
Volume	392
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(97)00708-5
Publication status	Published - 1997 Dec

Bibliographical note

Funding Information:
The authors acknowledge the financial support of the Office of Naval Research through contracts NOOO 14-92-J-1649 and 14-96-0280, administered by Drs. A1 Goodman and Larry Cooper, and the Semiconductor Research Corporation. J.R.A.C. was supported by a Fellowship from the Swedish

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(97)00708-5

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@article{84c40574a3e149e2a0f9a07d078f751c,

title = "Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy",

abstract = "Si(001) layers doped with B concentrations CB ranging from 5 x 1016 to 2 x 1021 cm-3 were grown on Si(001)-(2 x 1) substrates by gas-source molecular beam epitaxy using Si2H6 and B2H6. B was incorporated into substitutional electrically active sites at concentrations up to 2.5 x 1020 cm-3. With increasing incident flux ratios JB2H6/JSi2H6≥0.01 (corresponding to CB = 2 x 1019 cm-3), film growth rates decreased at Ts≥600°C, but increased at Ts≤550°C. Deuterium temperature-programmed desorption measurements as a function of increasing CB show strong B surface segregation, decreased steady-state H coverages θH, and lower dangling bond densities. The Si:B growth kinetics are well described by a model showing that at low temperatures, where steady-state θH values are high, increased H desorption rates from B-backbonded Si adatoms dominate, leading to an enhancement in RSi, whereas at higher temperatures RSi decreases due to the decreased adsorption-site density.",

author = "G. Glass and H. Kim and Sardela, {M. R.} and Q. Lu and Carlsson, {J. R.A.} and Abelson, {J. R.} and Greene, {J. E.}",

note = "Funding Information: The authors acknowledge the financial support of the Office of Naval Research through contracts NOOO 14-92-J-1649 and 14-96-0280, administered by Drs. A1 Goodman and Larry Cooper, and the Semiconductor Research Corporation. J.R.A.C. was supported by a Fellowship from the Swedish",

year = "1997",

month = dec,

doi = "10.1016/S0039-6028(97)00708-5",

language = "English",

volume = "392",

pages = "L63--L68",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

AU - Glass, G.

AU - Kim, H.

AU - Sardela, M. R.

AU - Lu, Q.

AU - Carlsson, J. R.A.

AU - Abelson, J. R.

AU - Greene, J. E.

N1 - Funding Information: The authors acknowledge the financial support of the Office of Naval Research through contracts NOOO 14-92-J-1649 and 14-96-0280, administered by Drs. A1 Goodman and Larry Cooper, and the Semiconductor Research Corporation. J.R.A.C. was supported by a Fellowship from the Swedish

PY - 1997/12

Y1 - 1997/12

N2 - Si(001) layers doped with B concentrations CB ranging from 5 x 1016 to 2 x 1021 cm-3 were grown on Si(001)-(2 x 1) substrates by gas-source molecular beam epitaxy using Si2H6 and B2H6. B was incorporated into substitutional electrically active sites at concentrations up to 2.5 x 1020 cm-3. With increasing incident flux ratios JB2H6/JSi2H6≥0.01 (corresponding to CB = 2 x 1019 cm-3), film growth rates decreased at Ts≥600°C, but increased at Ts≤550°C. Deuterium temperature-programmed desorption measurements as a function of increasing CB show strong B surface segregation, decreased steady-state H coverages θH, and lower dangling bond densities. The Si:B growth kinetics are well described by a model showing that at low temperatures, where steady-state θH values are high, increased H desorption rates from B-backbonded Si adatoms dominate, leading to an enhancement in RSi, whereas at higher temperatures RSi decreases due to the decreased adsorption-site density.

AB - Si(001) layers doped with B concentrations CB ranging from 5 x 1016 to 2 x 1021 cm-3 were grown on Si(001)-(2 x 1) substrates by gas-source molecular beam epitaxy using Si2H6 and B2H6. B was incorporated into substitutional electrically active sites at concentrations up to 2.5 x 1020 cm-3. With increasing incident flux ratios JB2H6/JSi2H6≥0.01 (corresponding to CB = 2 x 1019 cm-3), film growth rates decreased at Ts≥600°C, but increased at Ts≤550°C. Deuterium temperature-programmed desorption measurements as a function of increasing CB show strong B surface segregation, decreased steady-state H coverages θH, and lower dangling bond densities. The Si:B growth kinetics are well described by a model showing that at low temperatures, where steady-state θH values are high, increased H desorption rates from B-backbonded Si adatoms dominate, leading to an enhancement in RSi, whereas at higher temperatures RSi decreases due to the decreased adsorption-site density.

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M3 - Article

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VL - 392

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JO - Surface Science

JF - Surface Science

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ER -

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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