Effects of Hf incorporation in solution-processed Hf-InZnO TFTs

Woong Hee Jeong; Gun Hee Kim; Dong Lim Kim; Hyun Soo Shin; Hyun Jae Kim; Myung Kwan Ryu; Kyung Bae Park; Jong Baek Seon; Sang Yoon Lee

doi:10.1016/j.tsf.2010.12.210

Effects of Hf incorporation in solution-processed Hf-InZnO TFTs

Woong Hee Jeong, Gun Hee Kim, Dong Lim Kim, Hyun Soo Shin, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

In this study, the structural, optical, and electrical effects of Hf incorporation as a function of Hf atomic concentration were investigated using the solution process. Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively.

Original language	English
Pages (from-to)	5740-5743
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2010.12.210
Publication status	Published - 2011 Jun 30

Bibliographical note

Funding Information:
This work was supported by Samsung Advanced Institute of Technology and the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. R0A-2007-000-10044-0(2007) ].

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Effects of Hf incorporation in solution-processed Hf-InZnO TFTs",

abstract = "In this study, the structural, optical, and electrical effects of Hf incorporation as a function of Hf atomic concentration were investigated using the solution process. Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively.",

author = "Jeong, {Woong Hee} and Kim, {Gun Hee} and Kim, {Dong Lim} and Shin, {Hyun Soo} and Kim, {Hyun Jae} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Seon, {Jong Baek} and Lee, {Sang Yoon}",

note = "Funding Information: This work was supported by Samsung Advanced Institute of Technology and the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. R0A-2007-000-10044-0(2007) ].",

year = "2011",

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doi = "10.1016/j.tsf.2010.12.210",

language = "English",

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AU - Jeong, Woong Hee

AU - Kim, Gun Hee

AU - Kim, Dong Lim

AU - Shin, Hyun Soo

AU - Kim, Hyun Jae

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Lee, Sang Yoon

N1 - Funding Information: This work was supported by Samsung Advanced Institute of Technology and the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [no. R0A-2007-000-10044-0(2007) ].

PY - 2011/6/30

Y1 - 2011/6/30

N2 - In this study, the structural, optical, and electrical effects of Hf incorporation as a function of Hf atomic concentration were investigated using the solution process. Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively.

AB - In this study, the structural, optical, and electrical effects of Hf incorporation as a function of Hf atomic concentration were investigated using the solution process. Increases of Hf incorporation in Hf-InZnO (HIZO) thin films were associated with segregation of each element, and enhancement of optical bandgap energy and absorbance. We suggested that Hf could replace Ga as a carrier suppressor in the InZnO (IZO) system due to its low standard electrode potential, a property that reflects the oxidizing tendency of a metal cation. We observed that even small doses of Hf also resulted in the effective reduction of the carrier concentration in the IZO system. An increase of Hf incorporation in HIZO TFTs caused electrical properties including on-current, threshold voltage, and subthreshold swing to decrease, shift positively, and increase, respectively.

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Effects of Hf incorporation in solution-processed Hf-InZnO TFTs

Abstract

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All Science Journal Classification (ASJC) codes

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