Abstract
Amorphous carbon nitride (a-C:N) by helical resonator plasma enhanced chemical vapor deposition has been proposed as a coating material for silicon field emitter. To investigate the effects of heat treatment on the field emission, thermal annealing up to 600 °C was carried out in nitrogen ambient. The structural and compositional modifications induced by the annealing were followed by several analytical techniques: Fourier transformation infrared spectroscopy, elastic recoil detection analysis, and x-ray photoelectron spectroscopy. The hydrogen loss occur for annealing temperatures higher than 300 °C, resulting in the increase in the conducting part of the a-C:N films. a-C:N films significantly lowered the turn-on voltage and increased the emission current of the silicon emitters. After annealing at 600 °C, the field emission property was further enhanced presumably due to the efficient conduction through the a-C:N films.
| Original language | English |
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| Pages | 127-131 |
| Number of pages | 5 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 1997 Aug 17 → 1997 Aug 21 |
Other
| Other | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
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| City | Kyongju, Korea |
| Period | 97/8/17 → 97/8/21 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces