Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology

Myung Jae Lee; Holger Rücker; Woo Young Choi

doi:10.1109/LED.2011.2172390

Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology

Myung Jae Lee, Holger Rücker, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We investigate the effects of guard-ring (GR) structures on the performance of silicon avalanche photodetectors (APDs) fabricated with the standard complementary metal-oxide-semiconductor (CMOS) technology. Four types of CMOS-compatible APDs (CMOS-APDs) based on the p ⁺/n-well junction with different GR structures are fabricated, and their electric-field profiles are simulated and analyzed. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth for CMOS-APDs are measured and compared. It is demonstrated that the GR realized with shallow trench isolation provides the best CMOS-APD performance.

Original language	English
Article number	6087265
Pages (from-to)	80-82
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1109/LED.2011.2172390
Publication status	Published - 2012 Jan

Bibliographical note

Funding Information:
Manuscript received September 13, 2011; accepted October 7, 2011. Date of publication November 24, 2011; date of current version December 23, 2011. This work was supported by the Mid-career Research Program through an NRF grant funded by MEST (2010-0014798). The review of this letter was arranged by Editor P. K.-L. Yu.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2172390

Cite this

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abstract = "We investigate the effects of guard-ring (GR) structures on the performance of silicon avalanche photodetectors (APDs) fabricated with the standard complementary metal-oxide-semiconductor (CMOS) technology. Four types of CMOS-compatible APDs (CMOS-APDs) based on the p +/n-well junction with different GR structures are fabricated, and their electric-field profiles are simulated and analyzed. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth for CMOS-APDs are measured and compared. It is demonstrated that the GR realized with shallow trench isolation provides the best CMOS-APD performance.",

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Effects of guard-ring structures on the performance of silicon avalanche photodetectors fabricated with standard CMOS technology

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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