Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy

J. M. Myoung; K. Kim

doi:10.1116/1.582207

Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy

J. M. Myoung, K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.

Original language	English
Pages (from-to)	450-456
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.582207
Publication status	Published - 2000 Mar

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.582207

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abstract = "In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.",

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AB - In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.

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Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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