Effects of electrical characteristics on the non-rectangular gate structure variations for the multifinger MOSFETs

Chulhyun Park; Youngkyu Song; Jung Han Kang; Seong Ook Jung; Ilgu Yun

doi:10.1109/TCPMT.2010.2099532

Effects of electrical characteristics on the non-rectangular gate structure variations for the multifinger MOSFETs

Chulhyun Park, Youngkyu Song, Jung Han Kang, Seong Ook Jung, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel length is proposed. The test structures are fabricated and the parasitic model parameters are extracted using the measured data for the proposed model. The proposed model can support better physical explanation than the previously presented integrated length model. The proposed model can precisely explain the electrical characteristics and is supported by theoretical equations for non-rectangular gates, such as the threshold voltage, the saturation voltage, the saturation current, and the leakage current. However, the previous integrated length model cannot sufficiently explain the electrical characteristics for non-rectangular gates although it is sustained by theoretical equations. Furthermore, this paper shows the relationship between gate poly area and the electrical characteristics. As a result, the electrical characteristics are dependent on the variation of the minimum of the gate length, rather than the profile of gate length variation.

Original language	English
Article number	5725174
Pages (from-to)	352-358
Number of pages	7
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	1
Issue number	3
DOIs	https://doi.org/10.1109/TCPMT.2010.2099532
Publication status	Published - 2011

Bibliographical note

Funding Information:
Manuscript received July 14, 2010; revised October 10, 2010; accepted November 13, 2010. Date of publication March 7, 2011; date of current version April 8, 2011. This work was supported by the Institute of Telecommunication, Multimedia, and SOC Information Technology, Yonsei University, Seoul, Korea, under the Brain Korea 21 Program. Recommended for publication by Associate Editor B. Courtois upon evaluation of reviewers’ comments.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TCPMT.2010.2099532

Cite this

@article{8ecee7ece9a3494cb9f9020a2fe85b6f,

title = "Effects of electrical characteristics on the non-rectangular gate structure variations for the multifinger MOSFETs",

abstract = "In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel length is proposed. The test structures are fabricated and the parasitic model parameters are extracted using the measured data for the proposed model. The proposed model can support better physical explanation than the previously presented integrated length model. The proposed model can precisely explain the electrical characteristics and is supported by theoretical equations for non-rectangular gates, such as the threshold voltage, the saturation voltage, the saturation current, and the leakage current. However, the previous integrated length model cannot sufficiently explain the electrical characteristics for non-rectangular gates although it is sustained by theoretical equations. Furthermore, this paper shows the relationship between gate poly area and the electrical characteristics. As a result, the electrical characteristics are dependent on the variation of the minimum of the gate length, rather than the profile of gate length variation.",

author = "Chulhyun Park and Youngkyu Song and Kang, {Jung Han} and Jung, {Seong Ook} and Ilgu Yun",

note = "Funding Information: Manuscript received July 14, 2010; revised October 10, 2010; accepted November 13, 2010. Date of publication March 7, 2011; date of current version April 8, 2011. This work was supported by the Institute of Telecommunication, Multimedia, and SOC Information Technology, Yonsei University, Seoul, Korea, under the Brain Korea 21 Program. Recommended for publication by Associate Editor B. Courtois upon evaluation of reviewers{\textquoteright} comments.",

year = "2011",

doi = "10.1109/TCPMT.2010.2099532",

language = "English",

volume = "1",

pages = "352--358",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Effects of electrical characteristics on the non-rectangular gate structure variations for the multifinger MOSFETs

AU - Park, Chulhyun

AU - Song, Youngkyu

AU - Kang, Jung Han

AU - Jung, Seong Ook

AU - Yun, Ilgu

N1 - Funding Information: Manuscript received July 14, 2010; revised October 10, 2010; accepted November 13, 2010. Date of publication March 7, 2011; date of current version April 8, 2011. This work was supported by the Institute of Telecommunication, Multimedia, and SOC Information Technology, Yonsei University, Seoul, Korea, under the Brain Korea 21 Program. Recommended for publication by Associate Editor B. Courtois upon evaluation of reviewers’ comments.

PY - 2011

Y1 - 2011

N2 - In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel length is proposed. The test structures are fabricated and the parasitic model parameters are extracted using the measured data for the proposed model. The proposed model can support better physical explanation than the previously presented integrated length model. The proposed model can precisely explain the electrical characteristics and is supported by theoretical equations for non-rectangular gates, such as the threshold voltage, the saturation voltage, the saturation current, and the leakage current. However, the previous integrated length model cannot sufficiently explain the electrical characteristics for non-rectangular gates although it is sustained by theoretical equations. Furthermore, this paper shows the relationship between gate poly area and the electrical characteristics. As a result, the electrical characteristics are dependent on the variation of the minimum of the gate length, rather than the profile of gate length variation.

AB - In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel length is proposed. The test structures are fabricated and the parasitic model parameters are extracted using the measured data for the proposed model. The proposed model can support better physical explanation than the previously presented integrated length model. The proposed model can precisely explain the electrical characteristics and is supported by theoretical equations for non-rectangular gates, such as the threshold voltage, the saturation voltage, the saturation current, and the leakage current. However, the previous integrated length model cannot sufficiently explain the electrical characteristics for non-rectangular gates although it is sustained by theoretical equations. Furthermore, this paper shows the relationship between gate poly area and the electrical characteristics. As a result, the electrical characteristics are dependent on the variation of the minimum of the gate length, rather than the profile of gate length variation.

UR - http://www.scopus.com/inward/record.url?scp=84869063123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869063123&partnerID=8YFLogxK

U2 - 10.1109/TCPMT.2010.2099532

DO - 10.1109/TCPMT.2010.2099532

M3 - Article

AN - SCOPUS:84869063123

SN - 2156-3950

VL - 1

SP - 352

EP - 358

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

IS - 3

M1 - 5725174

ER -

Effects of electrical characteristics on the non-rectangular gate structure variations for the multifinger MOSFETs

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this