TY - GEN
T1 - Effects of composition ratio on solution-processed InGaZnO thin-film transistors
AU - Lee, Jeong Soo
AU - Song, Seung Min
AU - Lee, Soo Yeon
AU - Kim, Yong Hoon
AU - Kwon, Jang Yeon
AU - Han, Min Koo
PY - 2013
Y1 - 2013
N2 - We fabricated solution-processed IGZO TFTs with various composition ratio of precursors according to the contents of In, Ga, and Zn. Threshold voltage of solution-processed IGZO TFTs was-0.43 V, 3.86 V, and 11.12 V when the composition ratio was varied by 7:1:2, 6:3:1, and 5:1:4, respectively. Saturation mobility of solution-processed IGZO TFTs was 1.4 cm 2/V·sec, 0.84 cm2/V·sec, and 0.3 cm 2/V·sec with the composition ratio of 7:1:2, 6:3:1, and 5:1:4 respectively. When In composition ratio increased, the threshold voltage decreased and saturation mobility increased because of the increase of electron concentration. When Ga composition ratio increased, the off-current was decreased because of the suppression of formation of oxygen vacancies. When Zn composition ratio increased, the hysteresis was decreased because of the reduction of interstitial states between channel and insulator.
AB - We fabricated solution-processed IGZO TFTs with various composition ratio of precursors according to the contents of In, Ga, and Zn. Threshold voltage of solution-processed IGZO TFTs was-0.43 V, 3.86 V, and 11.12 V when the composition ratio was varied by 7:1:2, 6:3:1, and 5:1:4, respectively. Saturation mobility of solution-processed IGZO TFTs was 1.4 cm 2/V·sec, 0.84 cm2/V·sec, and 0.3 cm 2/V·sec with the composition ratio of 7:1:2, 6:3:1, and 5:1:4 respectively. When In composition ratio increased, the threshold voltage decreased and saturation mobility increased because of the increase of electron concentration. When Ga composition ratio increased, the off-current was decreased because of the suppression of formation of oxygen vacancies. When Zn composition ratio increased, the hysteresis was decreased because of the reduction of interstitial states between channel and insulator.
UR - http://www.scopus.com/inward/record.url?scp=84885642470&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885642470&partnerID=8YFLogxK
U2 - 10.1149/05302.0197ecst
DO - 10.1149/05302.0197ecst
M3 - Conference contribution
AN - SCOPUS:84885642470
SN - 9781607683759
T3 - ECS Transactions
SP - 197
EP - 202
BT - Wide-Bandgap Semiconductor Materials and Devices 14
T2 - Wide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
Y2 - 12 May 2013 through 16 May 2013
ER -