Effects of BF+2 implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

M. S. Oh, M. H. Joo, S. Im, H. B. Kim, H. K. Kim, J. H. Song

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Metastable pseudomorphic Ge0.06Si0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (100) substrates were implanted at room temperature by 70 keV BF2+ ions with three different doses of 3×1013, 1×1014, and 2.5×1014 cm-2. The implanted samples were subsequently annealed at 800 °C and 900 °C for 30 min in a vacuum tube furnace. Observed by MeV 4He channeling spectrometry, the sample implanted at a dose of 2.5×1014 BF2+ cm-2 is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge0.06Si0.94 samples become pronounced as the dose increases. Only the samples implanted at 3×1013 cm-2 do not visibly degrade nor relax during anneal at 800 °C. In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 8000 °C for 30 min after implantation to a dose of 2.5×1014 cm-2. It is concluded that such a low dose of 3×1013 BF2+ cm-2 can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900 °C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.

Original languageEnglish
Pages (from-to)49-55
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - 1999 Jan 1

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation


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