Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4

Soo Hyun Kim; Eui Seong Hwang; Baek Mann Kim; Joo Wan Lee; Ho Jung Sun; Tae Eun Hong; Jun Ki Kim; Hyunchul Sohn; Jinwoong Kim; Tae Sik Yoon

doi:10.1149/1.2035703

Effects of B₂H₆ pretreatment on ALD of W film using a sequential supply of WF₆ and SiH₄

Soo Hyun Kim, Eui Seong Hwang, Baek Mann Kim, Joo Wan Lee, Ho Jung Sun, Tae Eun Hong, Jun Ki Kim, Hyunchul Sohn, Jinwoong Kim, Tae Sik Yoon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The effects of diborane (B₂H₆) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF₆ and SiH₄ on thermally grown SiO₂ and TiN films at 300°C were investigated. The results show that the B ₂H₆ pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO₂, released during B ₂H₆ pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B₂H₆ pretreatment. The effects of B₂H₆ pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

Original language	English
Pages (from-to)	C155-C159
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1149/1.2035703
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4",

abstract = "The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.",

author = "Kim, {Soo Hyun} and Hwang, {Eui Seong} and Kim, {Baek Mann} and Lee, {Joo Wan} and Sun, {Ho Jung} and Hong, {Tae Eun} and Kim, {Jun Ki} and Hyunchul Sohn and Jinwoong Kim and Yoon, {Tae Sik}",

year = "2005",

doi = "10.1149/1.2035703",

language = "English",

volume = "8",

pages = "C155--C159",

journal = "Electrochemical and Solid-State Letters",

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publisher = "Electrochemical Society, Inc.",

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T1 - Effects of B2H6 pretreatment on ALD of W film using a sequential supply of WF6 and SiH4

AU - Kim, Soo Hyun

AU - Hwang, Eui Seong

AU - Kim, Baek Mann

AU - Lee, Joo Wan

AU - Sun, Ho Jung

AU - Hong, Tae Eun

AU - Kim, Jun Ki

AU - Sohn, Hyunchul

AU - Kim, Jinwoong

AU - Yoon, Tae Sik

PY - 2005

Y1 - 2005

N2 - The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

AB - The effects of diborane (B2H6) pretreatment on atomic layer deposition (ALD) of tungsten (W) thin film using a sequential supply of WF6 and SiH4 on thermally grown SiO2 and TiN films at 300°C were investigated. The results show that the B 2H6 pretreatment reduces the incubation time for film growth. X-ray photoelectron spectroscopy and scanning electron microscopy analysis suggest that elemental B on SiO2, released during B 2H6 pretreatment, induce rapid W nucleation. The drastically improved step coverage of ALD-W film is achieved at the ultrahigh aspect ratio contact (height: 2.23 μm and top diameter: 0.14 μm) by the enhanced nucleation and growth via B2H6 pretreatment. The effects of B2H6 pretreatment on the properties of ALD-W films such as roughness, phase, microstructure, and resistivity are also investigated.

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DO - 10.1149/1.2035703

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Effects of B₂H₆ pretreatment on ALD of W film using a sequential supply of WF₆ and SiH₄

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