Effects of as doping on properties of ZnO films

K. S. Huh, D. K. Hwang, K. H. Bang, M. K. Hong, D. H. Lee, J. M. Myoung, M. S. Oh, W. K. Choi

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


A series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

Original languageEnglish
Pages (from-to)649-654
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
EventProgress in Semiconductor Materials for Optoelectronic Applications - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 29

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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