Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering

Jong Yoon Ha; Ji Won Choi; Chong Yun Kang; S. F. Karmanenko; Seok Jin Yoon; Doo Jin Choi; Hyun Jai Kim

doi:10.1143/JJAP.44.L1196

Effects of annealing process on dielectric properties of (Ba,Sr)TiO ₃ thin films grown by RF magnetron sputtering

Jong Yoon Ha, Ji Won Choi, Chong Yun Kang, S. F. Karmanenko, Seok Jin Yoon, Doo Jin Choi, Hyun Jai Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Single phase thin films of (Ba_0.5Sr_0.5)TiO ₃ have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

Original language	English
Pages (from-to)	L1196-L1198
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	37-41
DOIs	https://doi.org/10.1143/JJAP.44.L1196
Publication status	Published - 2005 Sept 30

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering",

abstract = "Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.",

author = "Ha, {Jong Yoon} and Choi, {Ji Won} and Kang, {Chong Yun} and Karmanenko, {S. F.} and Yoon, {Seok Jin} and Choi, {Doo Jin} and Kim, {Hyun Jai}",

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doi = "10.1143/JJAP.44.L1196",

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T1 - Effects of annealing process on dielectric properties of (Ba,Sr)TiO 3 thin films grown by RF magnetron sputtering

AU - Ha, Jong Yoon

AU - Choi, Ji Won

AU - Kang, Chong Yun

AU - Karmanenko, S. F.

AU - Yoon, Seok Jin

AU - Choi, Doo Jin

AU - Kim, Hyun Jai

PY - 2005/9/30

Y1 - 2005/9/30

N2 - Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

AB - Single phase thin films of (Ba0.5Sr0.5)TiO 3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.

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SP - L1196-L1198

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 37-41

ER -

Effects of annealing process on dielectric properties of (Ba,Sr)TiO ₃ thin films grown by RF magnetron sputtering

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