Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP

Hyung Soon Park; Jong Goo Jung; Jum Yong Park; Jong Han Shin; Cheol Hwi Ryu; Hyun Chul Sohn; Hyun Goo Kang; Takeo Katho; Jae Gun Park

Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP

Hyung Soon Park, Jong Goo Jung, Jum Yong Park, Jong Han Shin, Cheol Hwi Ryu, Hyun Chul Sohn, Hyun Goo Kang, Takeo Katho, Jae Gun Park

Department of Materials Science and Engineering

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

The effects of the abrasive morphology and surfactant concentration in ceria slurry on removal rates for silicon oxide and silicon nitride films were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride films decreased with increasing surfactant concentration. This result was qualitatively explained by a model in which abrasive particles move through a viscous layer caused by surfactant adsorption onto the film surface being polished.

Original language	English
Pages	357-365
Number of pages	9
Publication status	Published - 2005
Event	10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 - Fremont, CA, United States Duration: 2005 Feb 23 → 2005 Feb 25

Other

Other	10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005
Country/Territory	United States
City	Fremont, CA
Period	05/2/23 → 05/2/25

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Park, H. S., Jung, J. G., Park, J. Y., Shin, J. H., Ryu, C. H., Sohn, H. C., Kang, H. G., Katho, T., & Park, J. G. (2005). Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP. 357-365. Paper presented at 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005, Fremont, CA, United States.

@conference{41bb9296346a40ba83a9ab5da7ec97bd,

title = "Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP",

abstract = "The effects of the abrasive morphology and surfactant concentration in ceria slurry on removal rates for silicon oxide and silicon nitride films were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride films decreased with increasing surfactant concentration. This result was qualitatively explained by a model in which abrasive particles move through a viscous layer caused by surfactant adsorption onto the film surface being polished.",

author = "Park, {Hyung Soon} and Jung, {Jong Goo} and Park, {Jum Yong} and Shin, {Jong Han} and Ryu, {Cheol Hwi} and Sohn, {Hyun Chul} and Kang, {Hyun Goo} and Takeo Katho and Park, {Jae Gun}",

year = "2005",

language = "English",

pages = "357--365",

note = "10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005 ; Conference date: 23-02-2005 Through 25-02-2005",

}

Park, HS, Jung, JG, Park, JY, Shin, JH, Ryu, CH, Sohn, HC, Kang, HG, Katho, T & Park, JG 2005, 'Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP', Paper presented at 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005, Fremont, CA, United States, 05/2/23 - 05/2/25 pp. 357-365.

Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP. / Park, Hyung Soon; Jung, Jong Goo; Park, Jum Yong et al.
2005. 357-365 Paper presented at 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005, Fremont, CA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP

AU - Park, Hyung Soon

AU - Jung, Jong Goo

AU - Park, Jum Yong

AU - Shin, Jong Han

AU - Ryu, Cheol Hwi

AU - Sohn, Hyun Chul

AU - Kang, Hyun Goo

AU - Katho, Takeo

AU - Park, Jae Gun

PY - 2005

Y1 - 2005

N2 - The effects of the abrasive morphology and surfactant concentration in ceria slurry on removal rates for silicon oxide and silicon nitride films were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride films decreased with increasing surfactant concentration. This result was qualitatively explained by a model in which abrasive particles move through a viscous layer caused by surfactant adsorption onto the film surface being polished.

AB - The effects of the abrasive morphology and surfactant concentration in ceria slurry on removal rates for silicon oxide and silicon nitride films were investigated through a systematic chemical-mechanical-polishing (CMP) experiment. We found that the smaller the abrasives were, the more quickly the removal rates for both oxide and nitride films decreased with increasing surfactant concentration. This result was qualitatively explained by a model in which abrasive particles move through a viscous layer caused by surfactant adsorption onto the film surface being polished.

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UR - http://www.scopus.com/inward/citedby.url?scp=84888213152&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84888213152

SP - 357

EP - 365

T2 - 10th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2005

Y2 - 23 February 2005 through 25 February 2005

ER -

Effects of abrasive size and surfactant concentration in ceria slurry for shallow trench isolation CMP

Abstract

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All Science Journal Classification (ASJC) codes

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