Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

H. J. Na; J. C. Lee; D. Heh; P. Sivasubramani; P. D. Kirsch; J. W. Oh; P. Majhi; S. Rivillon; Y. J. Chabal; B. H. Lee; R. Choi

doi:10.1063/1.3028025

Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

H. J. Na, J. C. Lee, D. Heh, P. Sivasubramani, P. D. Kirsch, J. W. Oh, P. Majhi, S. Rivillon, Y. J. Chabal, B. H. Lee, R. Choi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We demonstrate methodologies to improve the interface characteristics between a germanium (Ge) substrate and high-k gate dielectrics. GeON and SiO_x were investigated as passivating layers on a Ge surface. Smaller hysteresis and interface state density (D_it) were obtained using SiO_x interface layer and p-type metal oxide semiconductor field effect transistors (MOSFETs) fabricated with a gate stack of Ge/SiO _x/HfSiO/WN showed about two times higher effective mobility compared to universal Si/SiO₂ MOSFET. Because the formation of GeO_x at the interface resulted in higher hysteresis and equivalent oxide thickness, the effective suppression of growth of unstable GeO_x by SiO _x interface layer contributed to the good device characteristics of the fabricated devices.

Original language	English
Article number	192115
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.3028025
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (Grant No. KRF-2005-214-D00313).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3028025

Cite this

@article{5bfc9c5d115a4a3eb0e9b1bc9697ff68,

title = "Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors",

abstract = "We demonstrate methodologies to improve the interface characteristics between a germanium (Ge) substrate and high-k gate dielectrics. GeON and SiOx were investigated as passivating layers on a Ge surface. Smaller hysteresis and interface state density (Dit) were obtained using SiOx interface layer and p-type metal oxide semiconductor field effect transistors (MOSFETs) fabricated with a gate stack of Ge/SiO x/HfSiO/WN showed about two times higher effective mobility compared to universal Si/SiO2 MOSFET. Because the formation of GeOx at the interface resulted in higher hysteresis and equivalent oxide thickness, the effective suppression of growth of unstable GeOx by SiO x interface layer contributed to the good device characteristics of the fabricated devices.",

author = "Na, {H. J.} and Lee, {J. C.} and D. Heh and P. Sivasubramani and Kirsch, {P. D.} and Oh, {J. W.} and P. Majhi and S. Rivillon and Chabal, {Y. J.} and Lee, {B. H.} and R. Choi",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (Grant No. KRF-2005-214-D00313).",

year = "2008",

doi = "10.1063/1.3028025",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

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TY - JOUR

T1 - Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

AU - Na, H. J.

AU - Lee, J. C.

AU - Heh, D.

AU - Sivasubramani, P.

AU - Kirsch, P. D.

AU - Oh, J. W.

AU - Majhi, P.

AU - Rivillon, S.

AU - Chabal, Y. J.

AU - Lee, B. H.

AU - Choi, R.

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (Grant No. KRF-2005-214-D00313).

PY - 2008

Y1 - 2008

N2 - We demonstrate methodologies to improve the interface characteristics between a germanium (Ge) substrate and high-k gate dielectrics. GeON and SiOx were investigated as passivating layers on a Ge surface. Smaller hysteresis and interface state density (Dit) were obtained using SiOx interface layer and p-type metal oxide semiconductor field effect transistors (MOSFETs) fabricated with a gate stack of Ge/SiO x/HfSiO/WN showed about two times higher effective mobility compared to universal Si/SiO2 MOSFET. Because the formation of GeOx at the interface resulted in higher hysteresis and equivalent oxide thickness, the effective suppression of growth of unstable GeOx by SiO x interface layer contributed to the good device characteristics of the fabricated devices.

AB - We demonstrate methodologies to improve the interface characteristics between a germanium (Ge) substrate and high-k gate dielectrics. GeON and SiOx were investigated as passivating layers on a Ge surface. Smaller hysteresis and interface state density (Dit) were obtained using SiOx interface layer and p-type metal oxide semiconductor field effect transistors (MOSFETs) fabricated with a gate stack of Ge/SiO x/HfSiO/WN showed about two times higher effective mobility compared to universal Si/SiO2 MOSFET. Because the formation of GeOx at the interface resulted in higher hysteresis and equivalent oxide thickness, the effective suppression of growth of unstable GeOx by SiO x interface layer contributed to the good device characteristics of the fabricated devices.

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U2 - 10.1063/1.3028025

DO - 10.1063/1.3028025

M3 - Article

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192115

ER -

Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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