Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Sunil Babu Eadi, Jeong Chan Lee, Hyeong Sub Song, Jungwoo Oh, Ga Won Lee, Hi Deok Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10−8 Ω·cm2, which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10−6 Ω·cm2. The current–voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

Original languageEnglish
Article number4054
JournalScientific reports
Volume10
Issue number1
DOIs
Publication statusPublished - 2020 Dec 1

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© 2020, The Author(s).

All Science Journal Classification (ASJC) codes

  • General

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