Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation

Wei Yip Loh; Hasnaa Etienne; Brian Coss; Injo Ok; Dean Turnbaugh; Yohann Spiegel; Frank Torregrosa; Joel Banti; Laurent Roux; Pui Yee Hung; Jungwoo Oh; Barry Sassman; Kelly Radar; Prashant Majhi; Hsing Huang Tseng; Rajarao Jammy

doi:10.1109/LED.2009.2031828

Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation

Wei Yip Loh, Hasnaa Etienne, Brian Coss, Injo Ok, Dean Turnbaugh, Yohann Spiegel, Frank Torregrosa, Joel Banti, Laurent Roux, Pui Yee Hung, Jungwoo Oh, Barry Sassman, Kelly Radar, Prashant Majhi, Hsing Huang Tseng, Rajarao Jammy

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Using a presilicide implantation approach, we demonstrate that the Schottky barrier height (SBH) of NiSi/n-Si(100) can be modulated by doping a Si substrate with a halogen species such as chlorine. Activation energy measurements indicate that an ultralow barrier of 0.08 eV for NiS/n-Si can be achieved when a high dose ∼ 1 × 10¹⁵cm² of chlorine is implanted prior to Ni silicidation. A secondary ion mass spectroscopy analysis on the presilicide Cl-implanted NiSi shows chlorine segregates at the interface with SBH tuning from 0.68 to 0.08 eV on n-Si and a corresponding increase in hole SBH on p-Si(100). The presilicide Cl-implanted NiSi film also demonstrates an enhanced thermal stability with a low sheet resistively of < 28μ Ω · cm even up to 850 °C.

Original language	English
Pages (from-to)	1140-1142
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2031828
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2031828

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Loh, W. Y., Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Hung, P. Y., Oh, J., Sassman, B., Radar, K., Majhi, P., Tseng, H. H., & Jammy, R. (2009). Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation. IEEE Electron Device Letters, 30(11), 1140-1142. https://doi.org/10.1109/LED.2009.2031828

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title = "Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation",

abstract = "Using a presilicide implantation approach, we demonstrate that the Schottky barrier height (SBH) of NiSi/n-Si(100) can be modulated by doping a Si substrate with a halogen species such as chlorine. Activation energy measurements indicate that an ultralow barrier of 0.08 eV for NiS/n-Si can be achieved when a high dose ∼ 1 × 1015cm2 of chlorine is implanted prior to Ni silicidation. A secondary ion mass spectroscopy analysis on the presilicide Cl-implanted NiSi shows chlorine segregates at the interface with SBH tuning from 0.68 to 0.08 eV on n-Si and a corresponding increase in hole SBH on p-Si(100). The presilicide Cl-implanted NiSi film also demonstrates an enhanced thermal stability with a low sheet resistively of < 28μ Ω · cm even up to 850 °C.",

author = "Loh, {Wei Yip} and Hasnaa Etienne and Brian Coss and Injo Ok and Dean Turnbaugh and Yohann Spiegel and Frank Torregrosa and Joel Banti and Laurent Roux and Hung, {Pui Yee} and Jungwoo Oh and Barry Sassman and Kelly Radar and Prashant Majhi and Tseng, {Hsing Huang} and Rajarao Jammy",

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language = "English",

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journal = "IEEE Electron Device Letters",

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Loh, WY, Etienne, H, Coss, B, Ok, I, Turnbaugh, D, Spiegel, Y, Torregrosa, F, Banti, J, Roux, L, Hung, PY, Oh, J, Sassman, B, Radar, K, Majhi, P, Tseng, HH & Jammy, R 2009, 'Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation', IEEE Electron Device Letters, vol. 30, no. 11, pp. 1140-1142. https://doi.org/10.1109/LED.2009.2031828

TY - JOUR

T1 - Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation

AU - Loh, Wei Yip

AU - Etienne, Hasnaa

AU - Coss, Brian

AU - Ok, Injo

AU - Turnbaugh, Dean

AU - Spiegel, Yohann

AU - Torregrosa, Frank

AU - Banti, Joel

AU - Roux, Laurent

AU - Hung, Pui Yee

AU - Oh, Jungwoo

AU - Sassman, Barry

AU - Radar, Kelly

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Jammy, Rajarao

PY - 2009

Y1 - 2009

N2 - Using a presilicide implantation approach, we demonstrate that the Schottky barrier height (SBH) of NiSi/n-Si(100) can be modulated by doping a Si substrate with a halogen species such as chlorine. Activation energy measurements indicate that an ultralow barrier of 0.08 eV for NiS/n-Si can be achieved when a high dose ∼ 1 × 1015cm2 of chlorine is implanted prior to Ni silicidation. A secondary ion mass spectroscopy analysis on the presilicide Cl-implanted NiSi shows chlorine segregates at the interface with SBH tuning from 0.68 to 0.08 eV on n-Si and a corresponding increase in hole SBH on p-Si(100). The presilicide Cl-implanted NiSi film also demonstrates an enhanced thermal stability with a low sheet resistively of < 28μ Ω · cm even up to 850 °C.

AB - Using a presilicide implantation approach, we demonstrate that the Schottky barrier height (SBH) of NiSi/n-Si(100) can be modulated by doping a Si substrate with a halogen species such as chlorine. Activation energy measurements indicate that an ultralow barrier of 0.08 eV for NiS/n-Si can be achieved when a high dose ∼ 1 × 1015cm2 of chlorine is implanted prior to Ni silicidation. A secondary ion mass spectroscopy analysis on the presilicide Cl-implanted NiSi shows chlorine segregates at the interface with SBH tuning from 0.68 to 0.08 eV on n-Si and a corresponding increase in hole SBH on p-Si(100). The presilicide Cl-implanted NiSi film also demonstrates an enhanced thermal stability with a low sheet resistively of < 28μ Ω · cm even up to 850 °C.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Effective modulation of Ni silicide schottky barrier height using chlorine ion implantation and segregation

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