Effective formation of interface controlled Y2O3 thin film on Si(1 0 0) in a metal-(ferroelectric)-insulator-semiconductor structure

Kwang Ho Kwon, Chang Ki Lee, Jun Kyu Yang, Sun Gyu Choi, Ho Jung Chang, Hyeongtag Jeon, Hyung Ho Park

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8 Citations (Scopus)


Yttrium was deposited on the chemical oxide of Si and annealed under vacuum to control the interface for the formation of Y2O3 as an insulating barrier to construct a metal-ferroelectric-insulator-semiconductor structure. Two different pre-annealing temperatures of 600 and 700 °C were chosen to investigate the effect of the interface state formed after the pre-annealing step on the successive formation of Y2O3 insulator and Nd2Ti2O7 (NTO) ferroelectric layer through annealing under an oxygen atmosphere at 800 °C. Pre-anneal treatments of Y-metal/chemical-SiO2/Si at 600 and 700 °C induced a formation of Y2O3 and Y-silicate, respectively. The difference in the pre-anneal temperature induced almost no change in the electrical properties of the Y2O3/interface/Si system, but degraded properties were observed in the NTO/Y2O3/interface/Si system pre-annealed at 600 °C when compared with the sample pre-annealed at 700 °C. C-V characteristics of the NTO/Y2O3/Si structured system showed a clockwise direction of hysteresis, and this gap could be used as a memory window for a ferroelectric-gate. A smaller hysteric gap and electrical breakdown values were observed in the NTO/Y2O3/Si system pre-annealed at 600 °C, and this was due to an unintentional distribution of the applied field from the presence of an interfacial layer containing Y-silicate and SiO2 phases.

Original languageEnglish
Pages (from-to)1781-1785
Number of pages5
JournalMicroelectronic Engineering
Issue number8
Publication statusPublished - 2008 Aug

Bibliographical note

Funding Information:
This work was supported by Grant No. R01-2005-000-10058-0 from the Basic Research Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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