Effective atomic layer deposition procedure for Al-dopant distribution in ZnO thin films

Jin Yong Kim, Yong June Choi, Hyung Ho Park, Stephen Golledge, David C. Johnson

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


A zinc-metal dopant-oxygen precursor exposure cycle is demonstrated as a modified deposition procedure for better distribution of Al-dopants in ZnO films by atomic layer deposition with the aim to reduce the formation of nanolaminate thin films that might form with the typically used alternating ZnO and metal oxide deposition procedure. The distribution and chemical bonding states of Al-dopants were studied with various dopant deposition intervals of Zn-Al-O precursor and Zn-O cycles at 1::4, 1::9, 1::14, and 1::19 ratios. The smallest resistivity of Al-doped ZnO film without degradation of transparency was obtained at 250 °C with 5.37× 10-4 Ωcm.

Original languageEnglish
Pages (from-to)1111-1114
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number5
Publication statusPublished - 2010 Sept

Bibliographical note

Funding Information:
This research was supported by the Nano R&D Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. 2009-0082604).

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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