Effect of ZrO 2 incorporation into high dielectric Gd 2O 3 film grown on Si(111)

S. A. Park, Y. S. Roh, Y. K. Kim, J. H. Baeck, M. Noh, K. Jeong, M. H. Cho, C. H. Chang, M. K. Joo, T. G. Kim, J. H. Song, D. H. Ko

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Gd2 O3 films, in which Zr O2 was incorporated, were epitaxially grown on Si(111) using an electron-beam evaporation and effusion method. The crystalline structure and morphological characteristics were investigated by various measurements. A silicide layer was locally formed during the initial growth stage due to interactions between elemental Gd and Si in the Gd2 O3 film, resulting in poor interfacial characteristics and extensive destruction of the crystalline structure. However, the incorporation of Zr O2 influenced the unit-cell structure of Gd2 O3, which contains oxygen vacancies that is located diagonally, enhancing the structural stability owing to the effective suppression of the interfacial layer. The effect on the initial growth stage as the result of incorporation improves the crystalline quality of the epitaxial Gd2 O3 film and structural coherence between the film and substrate.

Original languageEnglish
Article number024906
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2005 Jul 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Effect of ZrO 2 incorporation into high dielectric Gd 2O 3 film grown on Si(111)'. Together they form a unique fingerprint.

Cite this