Effect of Zr addition on ZnSnO thin-film transistors using a solution process

You Seung Rim; Dong Lim Kim; Woong Hee Jeong; Hyun Jae Kim

doi:10.1063/1.3524514

Effect of Zr addition on ZnSnO thin-film transistors using a solution process

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

174 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with a ZrZnSnO (ZZTO) channel layer were fabricated using a solution process. As-prepared ZnSnO (ZTO) TFTs had a large off-current. However, as the content of Zr ions increased in ZTO, the threshold voltage shifted, and the off-current in the TFTs decreased. Because Zr has a lower standard electrode potential, it is more readily oxidized than Sn or Zn. Thus, Zr acted as an effective carrier suppressor in the ZTO system and a ZZTO TFT with a high mobility of a 4.02 cm² V^-1 s^-1 and a large on/off ratio of over 10⁶ was achieved.

Original language	English
Article number	233502
Journal	Applied Physics Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1063/1.3524514
Publication status	Published - 2010 Dec 6

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant, funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0(2007)].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3524514

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title = "Effect of Zr addition on ZnSnO thin-film transistors using a solution process",

abstract = "Thin-film transistors (TFTs) with a ZrZnSnO (ZZTO) channel layer were fabricated using a solution process. As-prepared ZnSnO (ZTO) TFTs had a large off-current. However, as the content of Zr ions increased in ZTO, the threshold voltage shifted, and the off-current in the TFTs decreased. Because Zr has a lower standard electrode potential, it is more readily oxidized than Sn or Zn. Thus, Zr acted as an effective carrier suppressor in the ZTO system and a ZZTO TFT with a high mobility of a 4.02 cm2 V-1 s-1 and a large on/off ratio of over 106 was achieved.",

author = "Rim, {You Seung} and Kim, {Dong Lim} and Jeong, {Woong Hee} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant, funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0(2007)].",

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AU - Rim, You Seung

AU - Kim, Dong Lim

AU - Jeong, Woong Hee

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant, funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0(2007)].

PY - 2010/12/6

Y1 - 2010/12/6

N2 - Thin-film transistors (TFTs) with a ZrZnSnO (ZZTO) channel layer were fabricated using a solution process. As-prepared ZnSnO (ZTO) TFTs had a large off-current. However, as the content of Zr ions increased in ZTO, the threshold voltage shifted, and the off-current in the TFTs decreased. Because Zr has a lower standard electrode potential, it is more readily oxidized than Sn or Zn. Thus, Zr acted as an effective carrier suppressor in the ZTO system and a ZZTO TFT with a high mobility of a 4.02 cm2 V-1 s-1 and a large on/off ratio of over 106 was achieved.

AB - Thin-film transistors (TFTs) with a ZrZnSnO (ZZTO) channel layer were fabricated using a solution process. As-prepared ZnSnO (ZTO) TFTs had a large off-current. However, as the content of Zr ions increased in ZTO, the threshold voltage shifted, and the off-current in the TFTs decreased. Because Zr has a lower standard electrode potential, it is more readily oxidized than Sn or Zn. Thus, Zr acted as an effective carrier suppressor in the ZTO system and a ZZTO TFT with a high mobility of a 4.02 cm2 V-1 s-1 and a large on/off ratio of over 106 was achieved.

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Effect of Zr addition on ZnSnO thin-film transistors using a solution process

Abstract

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