Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga₂Te₃ Thin Films

A cross-point array structure is a promising structure in high-density memory applications. However, a cross-point array has sneak current paths from selected cells to neighboring unselected cells, and a selector device is required to suppress the sneak current issue. Therefore, the capability of modulating the threshold voltage is one of the essential elements facilitating reliable operation of the cross-point array structure. Herein, the effect of Zr doping on the threshold switching properties of amorphous Ga₂Te₃ (a-Ga₂Te₃) thin films is investigated with optical and electrical properties and the thermal stability of amorphous phase. Zr-doped a-Ga₂Te₃ thin films increase the threshold and holding voltages with improved thermal stability. Moreover, Zr doping reduces the leakage current of the Ga₂Te₃ selector device, which is beneficial to implement the cross-point array of high density. Regarding the endurance, Zr-doped a-Ga₂Te₃ thin films show stable operation until 10⁹ cycles.