Abstract
The formation of crystalline phase in Si by hot-wire chemical vapor deposition (HWCVD) was investigated, focusing on the microstructural evolution as a function of hot-wire temperature. The microstructure of films deposited on a Si wafer was compared between hot-wire temperatures of 1590, 1670, and 1800 °C. A heavily twinned structure was observed at the wire temperature of 1670 °C, which resulted in the apparent intensity peak of (1 1 1) hexagonal-closed packed (HCP) crystalline Si from a typical face-centered cubic (FCC) crystalline Si structure in the X-ray diffraction analysis. The twin-related HCP crystalline phase was markedly diminished at 1800 °C and hardly observed at 1590 °C. The observed deposition behavior was approached by the effect of the wire temperature on the size of charged nanoparticles formed in the gas phase in the HWCVD process.
| Original language | English |
|---|---|
| Pages (from-to) | 324-328 |
| Number of pages | 5 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 93 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 Mar |
Bibliographical note
Funding Information:This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory Program funded by the Ministry of Science and Technology (No. M10600000159-06J0000-15910), the Nano-Systems Institute-National Core Research Center (NSI-NCRC) program of the KOSEF, and the Korea Research Foundation Grant funded by the Korea government (MOEHRD) (KRF-2006-311-8-1450).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
