Effect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co40Fe40B20

Soogil Lee, Sanghoon Kim, Jangyup Son, Jongin Cha, Sachin Pathak, Jongill Hong

Research output: Contribution to journalArticlepeer-review


We found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co40Fe40B20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance-area product (RsA) of this STC on n-type Ge after postannealing at 350 °C (1.97 ' 106&m2) is nearly one order of magnitude larger than that of the as-deposited one (2.34 ' 105&m2). The dependence of RsA on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.

Original languageEnglish
Article number090303
JournalJapanese journal of applied physics
Issue number9
Publication statusPublished - 2016 Sept

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Effect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co40Fe40B20'. Together they form a unique fingerprint.

Cite this