Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance

Young Wook Lee; Sun Jae Kim; Soo Yeon Lee; Woo Geun Lee; Kap Soo Yoon; Jae Woo Park; Jang Yeon Kwon; Min Koo Han

doi:10.1149/2.003205esl

Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance

Young Wook Lee, Sun Jae Kim, Soo Yeon Lee, Woo Geun Lee, Kap Soo Yoon, Jae Woo Park, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We successfully fabricated a-IGZO TFTs with a TiCu sourcedrain (SD) in order to reduce the data-line resistance. SiNx passivation was used to protect the Cu from Cu-oxygen diffusion. The TFTs exhibited normal enhancement-mode characteristics compared to the TFT employing a Mo SD, which behaved like a conductor. Our experiments suggest that the TiCu SDs control the channel resistivity of the fabricated TFT lower than the Mo case. We found an indium-deficient IGZO layer under the Ti contact; this is thought to be the origin which reduces oxygen vacancy concentration in the channel.

Original language	English
Pages (from-to)	H126-H129
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.003205esl
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/2.003205esl

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abstract = "We successfully fabricated a-IGZO TFTs with a TiCu sourcedrain (SD) in order to reduce the data-line resistance. SiNx passivation was used to protect the Cu from Cu-oxygen diffusion. The TFTs exhibited normal enhancement-mode characteristics compared to the TFT employing a Mo SD, which behaved like a conductor. Our experiments suggest that the TiCu SDs control the channel resistivity of the fabricated TFT lower than the Mo case. We found an indium-deficient IGZO layer under the Ti contact; this is thought to be the origin which reduces oxygen vacancy concentration in the channel.",

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AU - Lee, Young Wook

AU - Kim, Sun Jae

AU - Lee, Soo Yeon

AU - Lee, Woo Geun

AU - Yoon, Kap Soo

AU - Park, Jae Woo

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2012

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AB - We successfully fabricated a-IGZO TFTs with a TiCu sourcedrain (SD) in order to reduce the data-line resistance. SiNx passivation was used to protect the Cu from Cu-oxygen diffusion. The TFTs exhibited normal enhancement-mode characteristics compared to the TFT employing a Mo SD, which behaved like a conductor. Our experiments suggest that the TiCu SDs control the channel resistivity of the fabricated TFT lower than the Mo case. We found an indium-deficient IGZO layer under the Ti contact; this is thought to be the origin which reduces oxygen vacancy concentration in the channel.

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Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance

Abstract

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