Abstract
We studied amorphous silicon (a-Si) film deposited by sputtering as a precursor material for laser crystallization. By using radio frequency (r.f.) sputtering, a-Si film was deposited at room temperature. The a-Si film was crystallized by using an ultraviolet (UV) pulsed excimer laser, It was found that the a-Si film was delaminated, even at low laser energy densities below the energy density at which lateral grain growth could occur. However, when annealed for 1 hr at 500°C after deposition, the a-Si film endured without delamination up to and beyond the laser energy density at which lateral grain growth could occur. The grain size of the poly-Si film obtained by excimer laser annealing (ELA) after annealing the a-Si precursor film at 500°C was as large as 300 nm. We conclude that the 500°C thermal annealing prevents the delamination during laser irradiation due to a reduction of intrinsic stress as a result of densification of the film.
| Original language | English |
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| Pages (from-to) | S847-S850 |
| Journal | Journal of the Korean Physical Society |
| Volume | 45 |
| Issue number | SUPPL. |
| Publication status | Published - 2004 Dec |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)