Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

Jonggi Kim; Kyumin Lee; Yonjae Kim; Heedo Na; Dae Hong Ko; Hyunchul Sohn; Sunghoon Lee

doi:10.1016/j.matchemphys.2013.08.003

Effect of thermal annealing on resistance switching characteristics of Pt/ZrO₂/TiN stacks

Jonggi Kim, Kyumin Lee, Yonjae Kim, Heedo Na, Dae Hong Ko, Hyunchul Sohn, Sunghoon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO₂ films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO₂ films in the Pt/ZrO₂/TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO₂ films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO _xN_y layer between the ZrO₂ and the TiN bottom electrode was enlarged with annealing. The enlarged TiO_xN_y layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching.

Original language	English
Pages (from-to)	608-613
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	142
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2013.08.003
Publication status	Published - 2013 Nov 15

Bibliographical note

Funding Information:
This work was supported by the R&D Program of the Ministry of Knowledge Economy, the industry–university cooperation project of SK Hynix Semiconductor Inc., and the second stage of the Brain Korea 21 project.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.matchemphys.2013.08.003

Cite this

@article{aba6b89f6bbb4ce7b356c2b23bc14787,

title = "Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks",

abstract = "In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO2 films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO2 films in the Pt/ZrO2/TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO2 films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO xNy layer between the ZrO2 and the TiN bottom electrode was enlarged with annealing. The enlarged TiOxNy layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching.",

author = "Jonggi Kim and Kyumin Lee and Yonjae Kim and Heedo Na and Ko, {Dae Hong} and Hyunchul Sohn and Sunghoon Lee",

note = "Funding Information: This work was supported by the R&D Program of the Ministry of Knowledge Economy, the industry–university cooperation project of SK Hynix Semiconductor Inc., and the second stage of the Brain Korea 21 project.",

year = "2013",

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doi = "10.1016/j.matchemphys.2013.08.003",

language = "English",

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T1 - Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

AU - Kim, Jonggi

AU - Lee, Kyumin

AU - Kim, Yonjae

AU - Na, Heedo

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

AU - Lee, Sunghoon

N1 - Funding Information: This work was supported by the R&D Program of the Ministry of Knowledge Economy, the industry–university cooperation project of SK Hynix Semiconductor Inc., and the second stage of the Brain Korea 21 project.

PY - 2013/11/15

Y1 - 2013/11/15

N2 - In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO2 films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO2 films in the Pt/ZrO2/TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO2 films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO xNy layer between the ZrO2 and the TiN bottom electrode was enlarged with annealing. The enlarged TiOxNy layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching.

AB - In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO2 films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO2 films in the Pt/ZrO2/TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO2 films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO xNy layer between the ZrO2 and the TiN bottom electrode was enlarged with annealing. The enlarged TiOxNy layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching.

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