Effect of surface oxidation on the material loss of ingaas in acidic solutions

Jihoon Na; Sangwoo Lim

doi:10.4028/www.scientific.net/SSP.314.89

Effect of surface oxidation on the material loss of ingaas in acidic solutions

Jihoon Na, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Indium gallium arsenide (InGaAs) is one of the candidate materials to overcome the physical limitation of Si due to its excellent electrical properties. The effect of surface oxidation on the etching characteristics of InGaAs surface in acidic solutions were investigated. InGaAs surfaces was etched in HCl/H2O2/H2O (CPM) and HNO3/H2O2/H2O (NPM), while there was no thickness change in diluted HCl or HNO3. The CPM-treated InGaAs surface had a lower etching rate than the NPM-treated one, while etching rate of oxidized layer was higher in diluted HCl than in HNO3. NaCl added in the NPM acts as an etching inhibitor for InGaAs and the etching rate was significantly suppressed. It is thought that Cl− anion inhibits the formation of hydroxyl radical (OH∙) or consumes OH∙ in acidic solution, inhibiting surface oxidation of InGaAs and suppressing its material loss.

Original language	English
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
Editors	Paul W. Mertens, Kurt Wostyn, Marc Meuris, Marc Heyns
Publisher	Trans Tech Publications Ltd
Pages	89-94
Number of pages	6
ISBN (Print)	9783035738018
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.314.89
Publication status	Published - 2021
Event	15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 - Mechelen, Belgium Duration: 2021 Apr 12 → 2021 Apr 15

Publication series

Name	Solid State Phenomena
Volume	314 SSP
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Conference

Conference	15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
Country/Territory	Belgium
City	Mechelen
Period	21/4/12 → 21/4/15

Bibliographical note

Publisher Copyright:
© 2021 Trans Tech Publications Ltd, Switzerland.

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.4028/www.scientific.net/SSP.314.89

Cite this

Na, J., & Lim, S. (2021). Effect of surface oxidation on the material loss of ingaas in acidic solutions. In P. W. Mertens, K. Wostyn, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 (pp. 89-94). (Solid State Phenomena; Vol. 314 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.314.89

Na, Jihoon ; Lim, Sangwoo. / Effect of surface oxidation on the material loss of ingaas in acidic solutions. Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021. editor / Paul W. Mertens ; Kurt Wostyn ; Marc Meuris ; Marc Heyns. Trans Tech Publications Ltd, 2021. pp. 89-94 (Solid State Phenomena).

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title = "Effect of surface oxidation on the material loss of ingaas in acidic solutions",

abstract = "Indium gallium arsenide (InGaAs) is one of the candidate materials to overcome the physical limitation of Si due to its excellent electrical properties. The effect of surface oxidation on the etching characteristics of InGaAs surface in acidic solutions were investigated. InGaAs surfaces was etched in HCl/H2O2/H2O (CPM) and HNO3/H2O2/H2O (NPM), while there was no thickness change in diluted HCl or HNO3. The CPM-treated InGaAs surface had a lower etching rate than the NPM-treated one, while etching rate of oxidized layer was higher in diluted HCl than in HNO3. NaCl added in the NPM acts as an etching inhibitor for InGaAs and the etching rate was significantly suppressed. It is thought that Cl− anion inhibits the formation of hydroxyl radical (OH∙) or consumes OH∙ in acidic solution, inhibiting surface oxidation of InGaAs and suppressing its material loss.",

author = "Jihoon Na and Sangwoo Lim",

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doi = "10.4028/www.scientific.net/SSP.314.89",

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Na, J & Lim, S 2021, Effect of surface oxidation on the material loss of ingaas in acidic solutions. in PW Mertens, K Wostyn, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021. Solid State Phenomena, vol. 314 SSP, Trans Tech Publications Ltd, pp. 89-94, 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021, Mechelen, Belgium, 21/4/12. https://doi.org/10.4028/www.scientific.net/SSP.314.89

Effect of surface oxidation on the material loss of ingaas in acidic solutions. / Na, Jihoon; Lim, Sangwoo.
Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021. ed. / Paul W. Mertens; Kurt Wostyn; Marc Meuris; Marc Heyns. Trans Tech Publications Ltd, 2021. p. 89-94 (Solid State Phenomena; Vol. 314 SSP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Indium gallium arsenide (InGaAs) is one of the candidate materials to overcome the physical limitation of Si due to its excellent electrical properties. The effect of surface oxidation on the etching characteristics of InGaAs surface in acidic solutions were investigated. InGaAs surfaces was etched in HCl/H2O2/H2O (CPM) and HNO3/H2O2/H2O (NPM), while there was no thickness change in diluted HCl or HNO3. The CPM-treated InGaAs surface had a lower etching rate than the NPM-treated one, while etching rate of oxidized layer was higher in diluted HCl than in HNO3. NaCl added in the NPM acts as an etching inhibitor for InGaAs and the etching rate was significantly suppressed. It is thought that Cl− anion inhibits the formation of hydroxyl radical (OH∙) or consumes OH∙ in acidic solution, inhibiting surface oxidation of InGaAs and suppressing its material loss.

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Na J, Lim S. Effect of surface oxidation on the material loss of ingaas in acidic solutions. In Mertens PW, Wostyn K, Meuris M, Heyns M, editors, Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021. Trans Tech Publications Ltd. 2021. p. 89-94. (Solid State Phenomena). doi: 10.4028/www.scientific.net/SSP.314.89

Effect of surface oxidation on the material loss of ingaas in acidic solutions

Abstract

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