Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon

Heungsoo Park; C. R. Helms; Daehong Ko

doi:10.1149/1.1838547

Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon

Heungsoo Park, C. R. Helms, Daehong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.

Original language	English
Pages (from-to)	1724-1729
Number of pages	6
Journal	Journal of the Electrochemical Society
Volume	145
Issue number	5
DOIs	https://doi.org/10.1149/1.1838547
Publication status	Published - 1998 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1838547

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abstract = "Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.",

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AU - Ko, Daehong

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N2 - Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.

AB - Vacuum-evaporated iron caused a severe degradation in minority carrier lifetime irrespective of the cleans used indicating lifetime degradation is related to initial iron concentration, not merely to final iron concentration after cleaning. It was found to take at least three separate steps (within the RCA-based cleans) to effectively remove iron from hydrofluoric acid solution-last surfaces. It also was found that precipitates caused by iron contamination were formed underneath thermally grown silicon oxide at 920°C. The defects are believed to be iron suicides formed during the oxidation of iron-contaminated silicon.

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Effect of surface iron on photoconductivity carrier recombination lifetime of p-Type silicon

Abstract

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