Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films

A. Sivasankar Reddy; Hyung Ho Park; G. Mohan Rao; S. Uthanna; P. Sreedhara Reddy

doi:10.1016/j.jallcom.2008.06.107

Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO₂ films

A. Sivasankar Reddy, Hyung Ho Park, G. Mohan Rao, S. Uthanna, P. Sreedhara Reddy

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm²/V s and carrier concentration of 3.5 × 10¹⁷ cm^-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

Original language	English
Pages (from-to)	401-405
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	474
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2008.06.107
Publication status	Published - 2009 Apr 17

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636). This work was supported by the Second Stage of Brain Korea 21 Project in 2008.

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2008.06.107

Cite this

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title = "Effect of substrate temperature on the physical properties of dc magnetron sputtered CuAlO2 films",

abstract = "Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.",

author = "Reddy, {A. Sivasankar} and Park, {Hyung Ho} and Rao, {G. Mohan} and S. Uthanna and Reddy, {P. Sreedhara}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636). This work was supported by the Second Stage of Brain Korea 21 Project in 2008.",

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AU - Reddy, A. Sivasankar

AU - Park, Hyung Ho

AU - Rao, G. Mohan

AU - Uthanna, S.

AU - Reddy, P. Sreedhara

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636). This work was supported by the Second Stage of Brain Korea 21 Project in 2008.

PY - 2009/4/17

Y1 - 2009/4/17

N2 - Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

AB - Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (≥373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm2/V s and carrier concentration of 3.5 × 1017 cm-3 were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K.

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