Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric

Jin Hyung Jun; Doo Jin Choi; Keung Ho Kim; Ki Young Oh; Chul Ju Hwang

doi:10.1143/jjap.42.3519

Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric

Jin Hyung Jun, Doo Jin Choi, Keung Ho Kim, Ki Young Oh, Chul Ju Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 × 10^-4 A/cm² at -1 MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.

Original language	English
Pages (from-to)	3519-3522
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.42.3519
Publication status	Published - 2003 Jun

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 × 10-4 A/cm2 at -1 MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.",

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AU - Jun, Jin Hyung

AU - Choi, Doo Jin

AU - Kim, Keung Ho

AU - Oh, Ki Young

AU - Hwang, Chul Ju

PY - 2003/6

Y1 - 2003/6

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AB - The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 × 10-4 A/cm2 at -1 MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

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Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric

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