Effect of sputtering power on the physical properties of dc magnetron sputtered copper oxide thin films

A. Sivasankar Reddy; Hyung Ho Park; V. Sahadeva Reddy; K. V.S. Reddy; N. S. Sarma; S. Kaleemulla; S. Uthanna; P. Sreedhara Reddy

doi:10.1016/j.matchemphys.2008.02.031

Effect of sputtering power on the physical properties of dc magnetron sputtered copper oxide thin films

A. Sivasankar Reddy, Hyung Ho Park, V. Sahadeva Reddy, K. V.S. Reddy, N. S. Sarma, S. Kaleemulla, S. Uthanna, P. Sreedhara Reddy

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm^-2. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers ≤0.76 W cm^-2 exhibited mixed phase of Cu₂O and CuO while those formed at 1.08 W cm^-2 were single phase Cu₂O. The single-phase Cu₂O films formed at a sputtering power of 1.08 W cm^-2 showed electrical resistivity of 46 Ω cm, Hall mobility of 5.7 cm² V^-1 s^-1 and optical band gap of 2.04 eV.

Original language	English
Pages (from-to)	397-401
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	110
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2008.02.031
Publication status	Published - 2008 Aug 15

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636) and the Second Stage of Brain Korea 21 Project in 2008.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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10.1016/j.matchemphys.2008.02.031

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title = "Effect of sputtering power on the physical properties of dc magnetron sputtered copper oxide thin films",

abstract = "Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm-2. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers ≤0.76 W cm-2 exhibited mixed phase of Cu2O and CuO while those formed at 1.08 W cm-2 were single phase Cu2O. The single-phase Cu2O films formed at a sputtering power of 1.08 W cm-2 showed electrical resistivity of 46 Ω cm, Hall mobility of 5.7 cm2 V-1 s-1 and optical band gap of 2.04 eV.",

author = "Reddy, {A. Sivasankar} and Park, {Hyung Ho} and Reddy, {V. Sahadeva} and Reddy, {K. V.S.} and Sarma, {N. S.} and S. Kaleemulla and S. Uthanna and Reddy, {P. Sreedhara}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636) and the Second Stage of Brain Korea 21 Project in 2008.",

year = "2008",

month = aug,

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doi = "10.1016/j.matchemphys.2008.02.031",

language = "English",

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AU - Reddy, A. Sivasankar

AU - Park, Hyung Ho

AU - Reddy, V. Sahadeva

AU - Reddy, K. V.S.

AU - Sarma, N. S.

AU - Kaleemulla, S.

AU - Uthanna, S.

AU - Reddy, P. Sreedhara

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636) and the Second Stage of Brain Korea 21 Project in 2008.

PY - 2008/8/15

Y1 - 2008/8/15

N2 - Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm-2. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers ≤0.76 W cm-2 exhibited mixed phase of Cu2O and CuO while those formed at 1.08 W cm-2 were single phase Cu2O. The single-phase Cu2O films formed at a sputtering power of 1.08 W cm-2 showed electrical resistivity of 46 Ω cm, Hall mobility of 5.7 cm2 V-1 s-1 and optical band gap of 2.04 eV.

AB - Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm-2. The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers ≤0.76 W cm-2 exhibited mixed phase of Cu2O and CuO while those formed at 1.08 W cm-2 were single phase Cu2O. The single-phase Cu2O films formed at a sputtering power of 1.08 W cm-2 showed electrical resistivity of 46 Ω cm, Hall mobility of 5.7 cm2 V-1 s-1 and optical band gap of 2.04 eV.

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JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

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ER -

Effect of sputtering power on the physical properties of dc magnetron sputtered copper oxide thin films

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All Science Journal Classification (ASJC) codes

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