Effect of solvent on the preparation of ambient pressure-dried SiO2 aerogel films

Sang Bae Jung; Jung Ho Kim; Hong Ryul Kim; Hyung Ho Park

doi:10.1016/S0167-9317(02)00734-7

Effect of solvent on the preparation of ambient pressure-dried SiO₂ aerogel films

Sang Bae Jung, Jung Ho Kim, Hong Ryul Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

SiO₂ aerogel film has a promising property as intermetal dielectrics (IMD) for its low dielectric constant. However, a stable and porous SiO₂ aerogel film was not properly synthesized due to the rapid evaporation of solvent during spin coating even in a solvent saturated atmosphere. So less evaporative solvent, 2-methoxyethanol (2MeEtOH), was introduced and the properties of film were compared with films using conventional solvent, ethanol (EtOH). It was found that gelation was faster with 2MeEtOH than EtOH. Highly porous and three-dimensionally well microstructured SiO₂ aerogel film could be fabricated with 2MeEtOH. The maximum porosity of the films using 2MeEtOH and EtOH was 85 and 71%, respectively. The amount of residual -OR, and -OH groups was smaller in the former. The compositional ratios of Si:O:C in the films were 1:2.1:0.2 for the former and 1:2.4:1.1 for the latter. And corresponded dielectric constants were 1.6 and 2.2, respectively.

Original language	English
Pages (from-to)	113-122
Number of pages	10
Journal	Microelectronic Engineering
Volume	65
Issue number	1-2
DOIs	https://doi.org/10.1016/S0167-9317(02)00734-7
Publication status	Published - 2002 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(02)00734-7

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title = "Effect of solvent on the preparation of ambient pressure-dried SiO2 aerogel films",

abstract = "SiO2 aerogel film has a promising property as intermetal dielectrics (IMD) for its low dielectric constant. However, a stable and porous SiO2 aerogel film was not properly synthesized due to the rapid evaporation of solvent during spin coating even in a solvent saturated atmosphere. So less evaporative solvent, 2-methoxyethanol (2MeEtOH), was introduced and the properties of film were compared with films using conventional solvent, ethanol (EtOH). It was found that gelation was faster with 2MeEtOH than EtOH. Highly porous and three-dimensionally well microstructured SiO2 aerogel film could be fabricated with 2MeEtOH. The maximum porosity of the films using 2MeEtOH and EtOH was 85 and 71%, respectively. The amount of residual -OR, and -OH groups was smaller in the former. The compositional ratios of Si:O:C in the films were 1:2.1:0.2 for the former and 1:2.4:1.1 for the latter. And corresponded dielectric constants were 1.6 and 2.2, respectively.",

author = "Jung, {Sang Bae} and Kim, {Jung Ho} and Kim, {Hong Ryul} and Park, {Hyung Ho}",

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T1 - Effect of solvent on the preparation of ambient pressure-dried SiO2 aerogel films

AU - Jung, Sang Bae

AU - Kim, Jung Ho

AU - Kim, Hong Ryul

AU - Park, Hyung Ho

PY - 2002/12

Y1 - 2002/12

N2 - SiO2 aerogel film has a promising property as intermetal dielectrics (IMD) for its low dielectric constant. However, a stable and porous SiO2 aerogel film was not properly synthesized due to the rapid evaporation of solvent during spin coating even in a solvent saturated atmosphere. So less evaporative solvent, 2-methoxyethanol (2MeEtOH), was introduced and the properties of film were compared with films using conventional solvent, ethanol (EtOH). It was found that gelation was faster with 2MeEtOH than EtOH. Highly porous and three-dimensionally well microstructured SiO2 aerogel film could be fabricated with 2MeEtOH. The maximum porosity of the films using 2MeEtOH and EtOH was 85 and 71%, respectively. The amount of residual -OR, and -OH groups was smaller in the former. The compositional ratios of Si:O:C in the films were 1:2.1:0.2 for the former and 1:2.4:1.1 for the latter. And corresponded dielectric constants were 1.6 and 2.2, respectively.

AB - SiO2 aerogel film has a promising property as intermetal dielectrics (IMD) for its low dielectric constant. However, a stable and porous SiO2 aerogel film was not properly synthesized due to the rapid evaporation of solvent during spin coating even in a solvent saturated atmosphere. So less evaporative solvent, 2-methoxyethanol (2MeEtOH), was introduced and the properties of film were compared with films using conventional solvent, ethanol (EtOH). It was found that gelation was faster with 2MeEtOH than EtOH. Highly porous and three-dimensionally well microstructured SiO2 aerogel film could be fabricated with 2MeEtOH. The maximum porosity of the films using 2MeEtOH and EtOH was 85 and 71%, respectively. The amount of residual -OR, and -OH groups was smaller in the former. The compositional ratios of Si:O:C in the films were 1:2.1:0.2 for the former and 1:2.4:1.1 for the latter. And corresponded dielectric constants were 1.6 and 2.2, respectively.

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-2

ER -

Effect of solvent on the preparation of ambient pressure-dried SiO₂ aerogel films

Abstract

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