Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors

Kon Yi Heo; Keun Woo Lee; Sang Hoon Oh; Gun Hee Kim; Abderrafia Moujoud; Jean Ho Song; Hyun Jae Kim

doi:10.1080/15421400903058668

Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors

Kon Yi Heo, Keun Woo Lee, Sang Hoon Oh, Gun Hee Kim, Abderrafia Moujoud, Jean Ho Song, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, we have fabricated thin film transistors (TFTs) from a solution-based indium gallium zinc oxide (IGZO) and single-walled carbon nanotube (SWNT) blend by varying SWNT concentration. In order to improve electrical performances of IGZO TFT, SWNTs were used as carrier transport rods. We found out that the saturation field effect mobility (μ_sat) and on/off current ratio varied when the SWNT concentration changed. The concentration of SWNT in the solution is a critical parameter to control the electrical performances of IGZO TFT. The optimized performance of IGZO TFT with 0.04wt.% SWNT concentration is as follows: μ_sat of about 0.11cm²/Vs, an on/off current ratio of ∼ 10⁵, threshold voltage (V_th) of -2.5V, and a subthreshold slope (S-factor) of 4.1V/decade.

Original language	English
Pages (from-to)	87/[1221]-95/[1229]
Journal	Molecular Crystals and Liquid Crystals
Volume	510
DOIs	https://doi.org/10.1080/15421400903058668
Publication status	Published - 2009 Jan

Bibliographical note

Funding Information:
This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-311-2006-8-1450).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1080/15421400903058668

Cite this

@article{c4a1434a109b4020a8ce6e8ff7de4e02,

title = "Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors",

abstract = "In this work, we have fabricated thin film transistors (TFTs) from a solution-based indium gallium zinc oxide (IGZO) and single-walled carbon nanotube (SWNT) blend by varying SWNT concentration. In order to improve electrical performances of IGZO TFT, SWNTs were used as carrier transport rods. We found out that the saturation field effect mobility (μsat) and on/off current ratio varied when the SWNT concentration changed. The concentration of SWNT in the solution is a critical parameter to control the electrical performances of IGZO TFT. The optimized performance of IGZO TFT with 0.04wt.% SWNT concentration is as follows: μsat of about 0.11cm2/Vs, an on/off current ratio of ∼ 105, threshold voltage (Vth) of -2.5V, and a subthreshold slope (S-factor) of 4.1V/decade.",

author = "Heo, {Kon Yi} and Lee, {Keun Woo} and Oh, {Sang Hoon} and Kim, {Gun Hee} and Abderrafia Moujoud and Song, {Jean Ho} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-311-2006-8-1450).",

year = "2009",

month = jan,

doi = "10.1080/15421400903058668",

language = "English",

volume = "510",

pages = "87/[1221]--95/[1229]",

journal = "Molecular Crystals and Liquid Crystals",

issn = "1542-1406",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors

AU - Heo, Kon Yi

AU - Lee, Keun Woo

AU - Oh, Sang Hoon

AU - Kim, Gun Hee

AU - Moujoud, Abderrafia

AU - Song, Jean Ho

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported in part by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2006-311-2006-8-1450).

PY - 2009/1

Y1 - 2009/1

N2 - In this work, we have fabricated thin film transistors (TFTs) from a solution-based indium gallium zinc oxide (IGZO) and single-walled carbon nanotube (SWNT) blend by varying SWNT concentration. In order to improve electrical performances of IGZO TFT, SWNTs were used as carrier transport rods. We found out that the saturation field effect mobility (μsat) and on/off current ratio varied when the SWNT concentration changed. The concentration of SWNT in the solution is a critical parameter to control the electrical performances of IGZO TFT. The optimized performance of IGZO TFT with 0.04wt.% SWNT concentration is as follows: μsat of about 0.11cm2/Vs, an on/off current ratio of ∼ 105, threshold voltage (Vth) of -2.5V, and a subthreshold slope (S-factor) of 4.1V/decade.

AB - In this work, we have fabricated thin film transistors (TFTs) from a solution-based indium gallium zinc oxide (IGZO) and single-walled carbon nanotube (SWNT) blend by varying SWNT concentration. In order to improve electrical performances of IGZO TFT, SWNTs were used as carrier transport rods. We found out that the saturation field effect mobility (μsat) and on/off current ratio varied when the SWNT concentration changed. The concentration of SWNT in the solution is a critical parameter to control the electrical performances of IGZO TFT. The optimized performance of IGZO TFT with 0.04wt.% SWNT concentration is as follows: μsat of about 0.11cm2/Vs, an on/off current ratio of ∼ 105, threshold voltage (Vth) of -2.5V, and a subthreshold slope (S-factor) of 4.1V/decade.

UR - http://www.scopus.com/inward/record.url?scp=70349587241&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349587241&partnerID=8YFLogxK

U2 - 10.1080/15421400903058668

DO - 10.1080/15421400903058668

M3 - Article

AN - SCOPUS:70349587241

SN - 1542-1406

VL - 510

SP - 87/[1221]-95/[1229]

JO - Molecular Crystals and Liquid Crystals

JF - Molecular Crystals and Liquid Crystals

ER -

Effect of single-walled carbon nanotube concentration on the electrical properties of solution-based indium gallium zinc oxide thin film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this