Effect of Si wafer resistivity on the growth of ZnO nanorods

Seounghoon Baek, Sangwoo Lim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


ZnO nanorods were electrochemically synthesized using various resistivities of Si substrates. With the increase of Si wafer resistivity from 0.01-0.02 to 110-150 Ω cm, the average diameter of ZnO nanorods increased, while the density of the nanorods decreased. Initial value of the current density increased with a decrease of the Si resistivity, accelerating nucleation and formation of a ZnO nanorods. The saturated current density was increased with a higher Si wafer resistivity, which may be due to an increased surface area of the ZnO layer exposed to the solution, elevating the surface concentration of electrons.

Original languageEnglish
Pages (from-to)4560-4564
Number of pages5
JournalThin Solid Films
Issue number16
Publication statusPublished - 2009 Jun 30

Bibliographical note

Funding Information:
This work was supported by grant no. R01-2006-000-10230-0 from the Basic Research Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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