Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

Ook Sang Yoo, Jungwoo Oh, Kyung Seok Min, Chang Yong Kang, B. H. Lee, Kyong Taek Lee, Min Ki Na, Hyuk Min Kwon, P. Majhi, H. H. Tseng, Raj Jammy, J. S. Wang, Hi Deok Lee

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