Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

Ook Sang Yoo; Jungwoo Oh; Kyung Seok Min; Chang Yong Kang; B. H. Lee; Kyong Taek Lee; Min Ki Na; Hyuk Min Kwon; P. Majhi; H. H. Tseng; Raj Jammy; J. S. Wang; Hi Deok Lee

doi:10.1016/j.mee.2008.04.024

Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

Ook Sang Yoo, Jungwoo Oh, Kyung Seok Min, Chang Yong Kang, B. H. Lee, Kyong Taek Lee, Min Ki Na, Hyuk Min Kwon, P. Majhi, H. H. Tseng, Raj Jammy, J. S. Wang, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconductance (G_m) and enhanced drive current. In addition, lower threshold voltage shift and G_m,max degradation are observed during NBTI stress. The primary reason for these characteristics is attributed to the improved interface quality at the high-k dielectric/substrate interface. Charge pumping was used to verify the presence of lower density of states in Ge pMOSFETs with a Si cap.

Original language	English
Pages (from-to)	259-262
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	3
DOIs	https://doi.org/10.1016/j.mee.2008.04.024
Publication status	Published - 2009 Mar

Bibliographical note

Funding Information:
This work was supported in part by the global internship Program of Korea Research Foundation (KRF).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2008.04.024

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@article{c8e3bfcf68e242ce8bccf1f63d4b674b,

title = "Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs",

abstract = "The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconductance (Gm) and enhanced drive current. In addition, lower threshold voltage shift and Gm,max degradation are observed during NBTI stress. The primary reason for these characteristics is attributed to the improved interface quality at the high-k dielectric/substrate interface. Charge pumping was used to verify the presence of lower density of states in Ge pMOSFETs with a Si cap.",

author = "Yoo, {Ook Sang} and Jungwoo Oh and Min, {Kyung Seok} and Kang, {Chang Yong} and Lee, {B. H.} and Lee, {Kyong Taek} and Na, {Min Ki} and Kwon, {Hyuk Min} and P. Majhi and Tseng, {H. H.} and Raj Jammy and Wang, {J. S.} and Lee, {Hi Deok}",

note = "Funding Information: This work was supported in part by the global internship Program of Korea Research Foundation (KRF).",

year = "2009",

month = mar,

doi = "10.1016/j.mee.2008.04.024",

language = "English",

volume = "86",

pages = "259--262",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

AU - Yoo, Ook Sang

AU - Oh, Jungwoo

AU - Min, Kyung Seok

AU - Kang, Chang Yong

AU - Lee, B. H.

AU - Lee, Kyong Taek

AU - Na, Min Ki

AU - Kwon, Hyuk Min

AU - Majhi, P.

AU - Tseng, H. H.

AU - Jammy, Raj

AU - Wang, J. S.

AU - Lee, Hi Deok

N1 - Funding Information: This work was supported in part by the global internship Program of Korea Research Foundation (KRF).

PY - 2009/3

Y1 - 2009/3

N2 - The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconductance (Gm) and enhanced drive current. In addition, lower threshold voltage shift and Gm,max degradation are observed during NBTI stress. The primary reason for these characteristics is attributed to the improved interface quality at the high-k dielectric/substrate interface. Charge pumping was used to verify the presence of lower density of states in Ge pMOSFETs with a Si cap.

AB - The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconductance (Gm) and enhanced drive current. In addition, lower threshold voltage shift and Gm,max degradation are observed during NBTI stress. The primary reason for these characteristics is attributed to the improved interface quality at the high-k dielectric/substrate interface. Charge pumping was used to verify the presence of lower density of states in Ge pMOSFETs with a Si cap.

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U2 - 10.1016/j.mee.2008.04.024

DO - 10.1016/j.mee.2008.04.024

M3 - Article

AN - SCOPUS:59149102560

SN - 0167-9317

VL - 86

SP - 259

EP - 262

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 3

ER -

Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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