Effect of selective oxidation conditions on defect generation in gate oxide

Heung Jae Cho, Kwan Yong Lim, Se Aug Jang, Jung Ho Lee, Jae Geun Oh, Yong Soo Kim, Hong Seon Yang, Hyun Chul Sohn

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C-950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.

Original languageEnglish
Pages (from-to)1825-1828
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2004 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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