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Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ALD-Al2O3 gate dielectric
J. H. Lee, K. Koh, N. I. Lee, M. H. Cho, Y. K. Kim, J. S. Jeon, K. H. Cho, H. S. Shin, M. H. Kim, K. Fujihara, H. K. Kang, J. T. Moon
Research output: Contribution to journal › Conference article › peer-review
89
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(Scopus)