Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Nak Jin Seong; Soon Gil Yoon; Seung Jin Yeom; Hyun Kyung Woo; Deok Sin Kil; Jae Sung Roh; Hyun Chul Sohn

doi:10.1063/1.2053369

Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO₂ capacitors treated by N₂-plasma

Nak Jin Seong, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 Å was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.

Original language	English
Article number	132903
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	13
DOIs	https://doi.org/10.1063/1.2053369
Publication status	Published - 2005 Sept 26

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2002-042-D00066), the Brain Korea 21 project in 2003, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University, and by the Center for Ultramicrochemical Process Systems sponsored by KOSEF.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2053369

Cite this

@article{dfe5573c3fc946ce8cc3e0941396ba48,

title = "Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma",

abstract = "The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 {\AA} was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.",

author = "Seong, {Nak Jin} and Yoon, {Soon Gil} and Yeom, {Seung Jin} and Woo, {Hyun Kyung} and Kil, {Deok Sin} and Roh, {Jae Sung} and Sohn, {Hyun Chul}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2002-042-D00066), the Brain Korea 21 project in 2003, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University, and by the Center for Ultramicrochemical Process Systems sponsored by KOSEF.",

year = "2005",

month = sep,

day = "26",

doi = "10.1063/1.2053369",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

AU - Seong, Nak Jin

AU - Yoon, Soon Gil

AU - Yeom, Seung Jin

AU - Woo, Hyun Kyung

AU - Kil, Deok Sin

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2002-042-D00066), the Brain Korea 21 project in 2003, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University, and by the Center for Ultramicrochemical Process Systems sponsored by KOSEF.

PY - 2005/9/26

Y1 - 2005/9/26

N2 - The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 Å was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.

AB - The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 Å was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.

UR - http://www.scopus.com/inward/record.url?scp=28344433409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344433409&partnerID=8YFLogxK

U2 - 10.1063/1.2053369

DO - 10.1063/1.2053369

M3 - Article

AN - SCOPUS:28344433409

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132903

ER -