Effect of nitrogen incorporation on electrical properties of high-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition

Nak Jin Seong; Soon Gil Yoon; Seung Jin Yeom; Hyun Kyung Woo; Deok Sin Kil; Jae Sung Roh; Hyun Chul Sohn

doi:10.1080/10584580500414077

Effect of nitrogen incorporation on electrical properties of high-k nanomixed Hf_xAl_yO_z film capacitors grown on Ru metal electrodes by atomic layer deposition

Nak Jin Seong, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The Hf_xAl_yO_z nanomixed capacitors grown by atomic layer deposition were treated by N₂-plasma to improve electrical properties. Especially, leakage current characteristics was studied as a function of rf power and treatment temperature. The dielectric constant of the films was not varied irrespective of an increase of rf power and treatment temperature. The leakage current densities of the films treated by N ₂-plasma were effectively influenced by the treatment temperature rather than rf power. The N₂-plasma treatment at 300°C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. The dielectric constant, dielectric loss, and leakage current density at 2.0 V in 6 nm-thick Hf_0.27 Al_0.24 O _0.49 nanomixed films treated by N₂-plasma at 300°C and 70 W were approximately 16, 0.5%, and 2 × 10^-6 A/cm ², respectively.

Original language	English
Pages (from-to)	131-136
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	74
DOIs	https://doi.org/10.1080/10584580500414077
Publication status	Published - 2005
Event	Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 2005 Apr 17 → 2005 Apr 20

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2004-042-D00095), the Brain Korea 21 project in 2005, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580500414077

Cite this

@article{d6c3ed48b2994f40820d6936870405bd,

title = "Effect of nitrogen incorporation on electrical properties of high-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition",

abstract = "The HfxAlyOz nanomixed capacitors grown by atomic layer deposition were treated by N2-plasma to improve electrical properties. Especially, leakage current characteristics was studied as a function of rf power and treatment temperature. The dielectric constant of the films was not varied irrespective of an increase of rf power and treatment temperature. The leakage current densities of the films treated by N 2-plasma were effectively influenced by the treatment temperature rather than rf power. The N2-plasma treatment at 300°C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. The dielectric constant, dielectric loss, and leakage current density at 2.0 V in 6 nm-thick Hf0.27 Al0.24 O 0.49 nanomixed films treated by N2-plasma at 300°C and 70 W were approximately 16, 0.5%, and 2 × 10-6 A/cm 2, respectively.",

author = "Seong, {Nak Jin} and Yoon, {Soon Gil} and Yeom, {Seung Jin} and Woo, {Hyun Kyung} and Kil, {Deok Sin} and Roh, {Jae Sung} and Sohn, {Hyun Chul}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-042-D00095), the Brain Korea 21 project in 2005, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.; Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 ; Conference date: 17-04-2005 Through 20-04-2005",

year = "2005",

doi = "10.1080/10584580500414077",

language = "English",

volume = "74",

pages = "131--136",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Effect of nitrogen incorporation on electrical properties of high-k nanomixed HfxAlyOz film capacitors grown on Ru metal electrodes by atomic layer deposition

AU - Seong, Nak Jin

AU - Yoon, Soon Gil

AU - Yeom, Seung Jin

AU - Woo, Hyun Kyung

AU - Kil, Deok Sin

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-042-D00095), the Brain Korea 21 project in 2005, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.

PY - 2005

Y1 - 2005

N2 - The HfxAlyOz nanomixed capacitors grown by atomic layer deposition were treated by N2-plasma to improve electrical properties. Especially, leakage current characteristics was studied as a function of rf power and treatment temperature. The dielectric constant of the films was not varied irrespective of an increase of rf power and treatment temperature. The leakage current densities of the films treated by N 2-plasma were effectively influenced by the treatment temperature rather than rf power. The N2-plasma treatment at 300°C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. The dielectric constant, dielectric loss, and leakage current density at 2.0 V in 6 nm-thick Hf0.27 Al0.24 O 0.49 nanomixed films treated by N2-plasma at 300°C and 70 W were approximately 16, 0.5%, and 2 × 10-6 A/cm 2, respectively.

AB - The HfxAlyOz nanomixed capacitors grown by atomic layer deposition were treated by N2-plasma to improve electrical properties. Especially, leakage current characteristics was studied as a function of rf power and treatment temperature. The dielectric constant of the films was not varied irrespective of an increase of rf power and treatment temperature. The leakage current densities of the films treated by N 2-plasma were effectively influenced by the treatment temperature rather than rf power. The N2-plasma treatment at 300°C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. The dielectric constant, dielectric loss, and leakage current density at 2.0 V in 6 nm-thick Hf0.27 Al0.24 O 0.49 nanomixed films treated by N2-plasma at 300°C and 70 W were approximately 16, 0.5%, and 2 × 10-6 A/cm 2, respectively.

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DO - 10.1080/10584580500414077

M3 - Conference article

AN - SCOPUS:33645530459

SN - 1058-4587

VL - 74

SP - 131

EP - 136

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17

Y2 - 17 April 2005 through 20 April 2005

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