Effect of N-type doping and vacancy formation on the thermodynamic, electrical, structural, and bonding properties of Si: X. (X = P, As, and Sb): A theoretical study

Chemistry

• Lattice Parameter 100%
• Doping Material 80%
• Thermodynamics 40%
• Electron Particle 40%
• Structure 40%
• Concentration 40%
• Atom 40%
• Density Functional Theory 20%
• Electrical Property 20%
• Bond Length 20%
• First Principle 20%
• Doped Compound 20%
• Lone-Pair Electron 20%
• Doping 20%
• Environment 20%
• Density 20%
• Application 20%
• Alloy 20%
• Donor 20%
• Bond Angle 20%

Physics

• Lattice Parameter 100%
• Thermodynamics 40%
• Atoms 40%
• Approximation 40%
• Electrical Properties 20%
• Density Functional Theory 20%
• Properties of Materials 20%
• Shapes 20%
• Region 20%
• Utilization 20%
• Calculation 20%
• Environment 20%
• Alloy 20%
• Gradients 20%

Material Science

• Lattice Constant 100%
• Vacancy 100%
• Doping (Additives) 80%
• N-Type Doping 20%