TY - JOUR
T1 - Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO 2 gate stack
AU - Lee, Younghwan
AU - Park, Kibyung
AU - Im, Kyung Taek
AU - Lee, June Young
AU - Im, Seongil
AU - Lee, Jung Han
AU - Yi, Yeonjin
AU - Lim, Sangwoo
PY - 2009/5/30
Y1 - 2009/5/30
N2 - When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO 2 film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O 3 -oxidized surface, while HfO 2 film thickness was almost identical on both surfaces. Nevertheless, the HfO 2 stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.
AB - When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO 2 film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O 3 -oxidized surface, while HfO 2 film thickness was almost identical on both surfaces. Nevertheless, the HfO 2 stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.
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U2 - 10.1016/j.apsusc.2009.03.055
DO - 10.1016/j.apsusc.2009.03.055
M3 - Article
AN - SCOPUS:67349283564
SN - 0169-4332
VL - 255
SP - 7179
EP - 7182
JO - Applied Surface Science
JF - Applied Surface Science
IS - 16
ER -