Abstract
ZnO thin films were deposited by a sol-gel process using zinc acetate dihydrate and 2-methoxyethanol as starting precursor and solvent, respectively. Ag-nanoparticles were prepared with uniform size (4.4 nm) by the spontaneous reduction method of Ag 2-ethylhexanoate in Dimethyl sulfoxide. The optical and electrical characteristics of ZnO films with the introduction of 3A metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles were evaluated. The optical and electrical properties of metal-doped ZnO films were improved and light scatter, charge emission and the scattering behavior of Ag-nanoparticles incorporated into the ZnO thin film were measured. The introduction of Ag-nanoparticles into metal-doped ZnO films induced a slight decrease in the optical transmittance but an increase in the electrical sheet resistance.
| Original language | English |
|---|---|
| Pages (from-to) | 957-960 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 515 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 Nov 23 |
Bibliographical note
Funding Information:This work was supported by grant No. R01-2005-000-10058-0 from the Basic Research Program of the Korea Science and Engineering Foundation. The experiments at PLS using 7C1 beam line were supported by POSTECH (2005-2076-18).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry