Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors

Heedo Na; Jimin Lee; Juyoung Jeong; Taeho Kim; Hyunchul Sohn

doi:10.1007/s00339-018-1659-5

Effect of interfacial SiO_2−y layer and defect in HfO_2−x film on flat-band voltage of HfO_2−x/SiO_2−y stacks for backside-illuminated CMOS image sensors

Heedo Na, Jimin Lee, Juyoung Jeong, Taeho Kim, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO_2−x) film and the influence of the quality of the SiO_2−y interlayer on the nature of flat-band voltage (V_fb) in TiN/HfO/SiO_2−y/p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C–V and J–E analyses, the V_fb behavior was significantly affected by the characteristics of the SiO_2−y interlayer and the non-lattice oxygen fraction in the HfO_2−x films. The HfO_2−x/native SiO_2−y stack presented a V_fb of − 1.01 V for HfO_2−x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V_fb of the HfO_2−x/native SiO_2−y stack could be controlled from − 1.01 to − 0.56 V by changing the deposition conditions of the HfO_2−x film with the native SiO_2−y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

Original language	English
Article number	259
Journal	Applied Physics A: Materials Science and Processing
Volume	124
Issue number	3
DOIs	https://doi.org/10.1007/s00339-018-1659-5
Publication status	Published - 2018 Mar 1

Bibliographical note

Funding Information:
Acknowledgements This work was supported by the Ministry of Trade, Industry & Energy (MoTIE, Korea) under Industrial Strategic Technology Development Program (Grant no. 10067481) and the Brain Korea 21 plus projects (BK21 plus).

Publisher Copyright:
© 2018, Springer-Verlag GmbH Germany, part of Springer Nature.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

Access to Document

10.1007/s00339-018-1659-5

Cite this

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title = "Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors",

abstract = "In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2−x) film and the influence of the quality of the SiO2−y interlayer on the nature of flat-band voltage (Vfb) in TiN/HfO/SiO2−y/p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C–V and J–E analyses, the Vfb behavior was significantly affected by the characteristics of the SiO2−y interlayer and the non-lattice oxygen fraction in the HfO2−x films. The HfO2−x/native SiO2−y stack presented a Vfb of − 1.01 V for HfO2−x films with an oxygen gas fraction of 5% during sputtering. Additionally, the Vfb of the HfO2−x/native SiO2−y stack could be controlled from − 1.01 to − 0.56 V by changing the deposition conditions of the HfO2−x film with the native SiO2−y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.",

author = "Heedo Na and Jimin Lee and Juyoung Jeong and Taeho Kim and Hyunchul Sohn",

note = "Funding Information: Acknowledgements This work was supported by the Ministry of Trade, Industry & Energy (MoTIE, Korea) under Industrial Strategic Technology Development Program (Grant no. 10067481) and the Brain Korea 21 plus projects (BK21 plus). Publisher Copyright: {\textcopyright} 2018, Springer-Verlag GmbH Germany, part of Springer Nature.",

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AU - Na, Heedo

AU - Lee, Jimin

AU - Jeong, Juyoung

AU - Kim, Taeho

AU - Sohn, Hyunchul

N1 - Funding Information: Acknowledgements This work was supported by the Ministry of Trade, Industry & Energy (MoTIE, Korea) under Industrial Strategic Technology Development Program (Grant no. 10067481) and the Brain Korea 21 plus projects (BK21 plus). Publisher Copyright: © 2018, Springer-Verlag GmbH Germany, part of Springer Nature.

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N2 - In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2−x) film and the influence of the quality of the SiO2−y interlayer on the nature of flat-band voltage (Vfb) in TiN/HfO/SiO2−y/p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C–V and J–E analyses, the Vfb behavior was significantly affected by the characteristics of the SiO2−y interlayer and the non-lattice oxygen fraction in the HfO2−x films. The HfO2−x/native SiO2−y stack presented a Vfb of − 1.01 V for HfO2−x films with an oxygen gas fraction of 5% during sputtering. Additionally, the Vfb of the HfO2−x/native SiO2−y stack could be controlled from − 1.01 to − 0.56 V by changing the deposition conditions of the HfO2−x film with the native SiO2−y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

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