Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

Moon Hyung Jang; Seung Jong Park; Dong Heok Lim; Sung Jin Park; Mann Ho Cho; Dae Hong Ko; M. Y. Heo; Hyun Chul Sohn; Sang Ok Kim

doi:10.1063/1.3308479

Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

Moon Hyung Jang, Seung Jong Park, Dong Heok Lim, Sung Jin Park, Mann Ho Cho, Dae Hong Ko, M. Y. Heo, Hyun Chul Sohn, Sang Ok Kim

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The effects of the In content of InSbTe films with various stoichiometries (Sb₂ Te2.7, In0.5 Sb₂ Te2.9, and In2.6 Sb₂ Te2.9) on phase change characteristics were investigated. With increasing incorporation of In atoms into Sb₂ Te₃, various crystalline phases, i.e., In₂ Te₃, Sb, and In ₃SbTe₂, were observed due to the bond energy between the constituent atoms, while only Sb₂ Te₃ and the Sb ₂ Te₂ phases were observed in the case of Sb₂ Te2.7 and In0.5 Sb₂ Te2.9 films. In addition, the shifts in binding energy of the Sb 3d and In 3d peaks in x-ray photoelectron spectra after the annealing treatment were directly related to the amount of incorporated In. The observed changes in electronic structure suggest that the changes in electrical conductivity and crystalline phase are directly related to the extent of In incorporation.

Original language	English
Article number	052112
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3308479
Publication status	Published - 2010

Bibliographical note

Funding Information:
This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Commerce, Industry, and Energy.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3308479

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title = "Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure",

abstract = "The effects of the In content of InSbTe films with various stoichiometries (Sb2 Te2.7, In0.5 Sb2 Te2.9, and In2.6 Sb2 Te2.9) on phase change characteristics were investigated. With increasing incorporation of In atoms into Sb2 Te3, various crystalline phases, i.e., In2 Te3, Sb, and In 3SbTe2, were observed due to the bond energy between the constituent atoms, while only Sb2 Te3 and the Sb 2 Te2 phases were observed in the case of Sb2 Te2.7 and In0.5 Sb2 Te2.9 films. In addition, the shifts in binding energy of the Sb 3d and In 3d peaks in x-ray photoelectron spectra after the annealing treatment were directly related to the amount of incorporated In. The observed changes in electronic structure suggest that the changes in electrical conductivity and crystalline phase are directly related to the extent of In incorporation.",

author = "Jang, {Moon Hyung} and Park, {Seung Jong} and Lim, {Dong Heok} and Park, {Sung Jin} and Cho, {Mann Ho} and Ko, {Dae Hong} and Heo, {M. Y.} and Sohn, {Hyun Chul} and Kim, {Sang Ok}",

note = "Funding Information: This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Commerce, Industry, and Energy.",

year = "2010",

doi = "10.1063/1.3308479",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

AU - Jang, Moon Hyung

AU - Park, Seung Jong

AU - Lim, Dong Heok

AU - Park, Sung Jin

AU - Cho, Mann Ho

AU - Ko, Dae Hong

AU - Heo, M. Y.

AU - Sohn, Hyun Chul

AU - Kim, Sang Ok

N1 - Funding Information: This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Commerce, Industry, and Energy.

PY - 2010

Y1 - 2010

N2 - The effects of the In content of InSbTe films with various stoichiometries (Sb2 Te2.7, In0.5 Sb2 Te2.9, and In2.6 Sb2 Te2.9) on phase change characteristics were investigated. With increasing incorporation of In atoms into Sb2 Te3, various crystalline phases, i.e., In2 Te3, Sb, and In 3SbTe2, were observed due to the bond energy between the constituent atoms, while only Sb2 Te3 and the Sb 2 Te2 phases were observed in the case of Sb2 Te2.7 and In0.5 Sb2 Te2.9 films. In addition, the shifts in binding energy of the Sb 3d and In 3d peaks in x-ray photoelectron spectra after the annealing treatment were directly related to the amount of incorporated In. The observed changes in electronic structure suggest that the changes in electrical conductivity and crystalline phase are directly related to the extent of In incorporation.

AB - The effects of the In content of InSbTe films with various stoichiometries (Sb2 Te2.7, In0.5 Sb2 Te2.9, and In2.6 Sb2 Te2.9) on phase change characteristics were investigated. With increasing incorporation of In atoms into Sb2 Te3, various crystalline phases, i.e., In2 Te3, Sb, and In 3SbTe2, were observed due to the bond energy between the constituent atoms, while only Sb2 Te3 and the Sb 2 Te2 phases were observed in the case of Sb2 Te2.7 and In0.5 Sb2 Te2.9 films. In addition, the shifts in binding energy of the Sb 3d and In 3d peaks in x-ray photoelectron spectra after the annealing treatment were directly related to the amount of incorporated In. The observed changes in electronic structure suggest that the changes in electrical conductivity and crystalline phase are directly related to the extent of In incorporation.

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VL - 96

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JF - Applied Physics Letters

IS - 5

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ER -

Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

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