Three-terminal memristor devices with a channel length of 70 μm and a width of 5 μm are fabricated using undoped zinc oxide (ZnO), fluorine-doped zinc oxide (ZnO:F), and nitrogen-doped zinc oxide (ZnO:N) semiconductor thin films via atomic layer deposition. To observe the effects of humidity and hydrogen doping on their gate-tunable memristive behavior, gate-tunable memristive behaviors are measured with a drain bias (VD) ± 10 V at different gate voltages (VG) from 50 to −50 V under humidity of 40%, 55%, and 70%. Resistive switching behavior caused by the hydrogen doping effect is observed, and the on/off ratio increases with increasing humidity, whereas the gate tunability decreases. The conductance and gate tunability of all devices decrease with an increase in humidity due to the hydrogen doping effect. As this study adopts a three-terminal structure with an oxide memristor, it clearly shows the moisture effect on the memristive behavior of oxide-based memristors.
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2021 Aug|
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT) (2019R1F1A1059637) and the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program, No.10068075, “Development of Mott‐transition based forming‐less non‐volatile resistive switching memory & array.” Experiments at PLS‐II were supported, in part, by the Korean Ministry of Education, Science, and Technology (MEST) and the Pohang University of Science and Technology (POSTECH).
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry