Effect of Hydrogen Doping on the Gate-Tunable Memristive Behavior of Zinc Oxide Films with and without F or N Doping

Ki Hoon Son; Kyung Mun Kang; Hyung Ho Park; Hong Sub Lee

doi:10.1002/pssa.202000702

Effect of Hydrogen Doping on the Gate-Tunable Memristive Behavior of Zinc Oxide Films with and without F or N Doping

Ki Hoon Son, Kyung Mun Kang, Hyung Ho Park, Hong Sub Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Three-terminal memristor devices with a channel length of 70 μm and a width of 5 μm are fabricated using undoped zinc oxide (ZnO), fluorine-doped zinc oxide (ZnO:F), and nitrogen-doped zinc oxide (ZnO:N) semiconductor thin films via atomic layer deposition. To observe the effects of humidity and hydrogen doping on their gate-tunable memristive behavior, gate-tunable memristive behaviors are measured with a drain bias (V_D) ± 10 V at different gate voltages (V_G) from 50 to −50 V under humidity of 40%, 55%, and 70%. Resistive switching behavior caused by the hydrogen doping effect is observed, and the on/off ratio increases with increasing humidity, whereas the gate tunability decreases. The conductance and gate tunability of all devices decrease with an increase in humidity due to the hydrogen doping effect. As this study adopts a three-terminal structure with an oxide memristor, it clearly shows the moisture effect on the memristive behavior of oxide-based memristors.

Original language	English
Article number	2000702
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	218
Issue number	16
DOIs	https://doi.org/10.1002/pssa.202000702
Publication status	Published - 2021 Aug

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT) (2019R1F1A1059637) and the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program, No.10068075, “Development of Mott‐transition based forming‐less non‐volatile resistive switching memory & array.” Experiments at PLS‐II were supported, in part, by the Korean Ministry of Education, Science, and Technology (MEST) and the Pohang University of Science and Technology (POSTECH).

Publisher Copyright:
© 2020 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.202000702

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title = "Effect of Hydrogen Doping on the Gate-Tunable Memristive Behavior of Zinc Oxide Films with and without F or N Doping",

abstract = "Three-terminal memristor devices with a channel length of 70 μm and a width of 5 μm are fabricated using undoped zinc oxide (ZnO), fluorine-doped zinc oxide (ZnO:F), and nitrogen-doped zinc oxide (ZnO:N) semiconductor thin films via atomic layer deposition. To observe the effects of humidity and hydrogen doping on their gate-tunable memristive behavior, gate-tunable memristive behaviors are measured with a drain bias (VD) ± 10 V at different gate voltages (VG) from 50 to −50 V under humidity of 40%, 55%, and 70%. Resistive switching behavior caused by the hydrogen doping effect is observed, and the on/off ratio increases with increasing humidity, whereas the gate tunability decreases. The conductance and gate tunability of all devices decrease with an increase in humidity due to the hydrogen doping effect. As this study adopts a three-terminal structure with an oxide memristor, it clearly shows the moisture effect on the memristive behavior of oxide-based memristors.",

author = "Son, {Ki Hoon} and Kang, {Kyung Mun} and Park, {Hyung Ho} and Lee, {Hong Sub}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT) (2019R1F1A1059637) and the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program, No.10068075, “Development of Mott‐transition based forming‐less non‐volatile resistive switching memory & array.” Experiments at PLS‐II were supported, in part, by the Korean Ministry of Education, Science, and Technology (MEST) and the Pohang University of Science and Technology (POSTECH). Publisher Copyright: {\textcopyright} 2020 Wiley-VCH GmbH",

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N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT) (2019R1F1A1059637) and the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program, No.10068075, “Development of Mott‐transition based forming‐less non‐volatile resistive switching memory & array.” Experiments at PLS‐II were supported, in part, by the Korean Ministry of Education, Science, and Technology (MEST) and the Pohang University of Science and Technology (POSTECH). Publisher Copyright: © 2020 Wiley-VCH GmbH

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N2 - Three-terminal memristor devices with a channel length of 70 μm and a width of 5 μm are fabricated using undoped zinc oxide (ZnO), fluorine-doped zinc oxide (ZnO:F), and nitrogen-doped zinc oxide (ZnO:N) semiconductor thin films via atomic layer deposition. To observe the effects of humidity and hydrogen doping on their gate-tunable memristive behavior, gate-tunable memristive behaviors are measured with a drain bias (VD) ± 10 V at different gate voltages (VG) from 50 to −50 V under humidity of 40%, 55%, and 70%. Resistive switching behavior caused by the hydrogen doping effect is observed, and the on/off ratio increases with increasing humidity, whereas the gate tunability decreases. The conductance and gate tunability of all devices decrease with an increase in humidity due to the hydrogen doping effect. As this study adopts a three-terminal structure with an oxide memristor, it clearly shows the moisture effect on the memristive behavior of oxide-based memristors.

AB - Three-terminal memristor devices with a channel length of 70 μm and a width of 5 μm are fabricated using undoped zinc oxide (ZnO), fluorine-doped zinc oxide (ZnO:F), and nitrogen-doped zinc oxide (ZnO:N) semiconductor thin films via atomic layer deposition. To observe the effects of humidity and hydrogen doping on their gate-tunable memristive behavior, gate-tunable memristive behaviors are measured with a drain bias (VD) ± 10 V at different gate voltages (VG) from 50 to −50 V under humidity of 40%, 55%, and 70%. Resistive switching behavior caused by the hydrogen doping effect is observed, and the on/off ratio increases with increasing humidity, whereas the gate tunability decreases. The conductance and gate tunability of all devices decrease with an increase in humidity due to the hydrogen doping effect. As this study adopts a three-terminal structure with an oxide memristor, it clearly shows the moisture effect on the memristive behavior of oxide-based memristors.

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Effect of Hydrogen Doping on the Gate-Tunable Memristive Behavior of Zinc Oxide Films with and without F or N Doping

Abstract

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