Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Jin Hyung Jun; Hyo June Kim; Doo Jin Choi

doi:10.1016/j.ceramint.2007.09.072

Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Jin Hyung Jun, Hyo June Kim, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The properties of lanthanum oxide films and lanthanum aluminate films were investigated after dipping the films in DI-water. The La₂O₃ film showed rapid dissolution in DI-water and a swift decrease in thickness resulting in an increased leakage current density. The LAO film showed almost no changes in thickness due to the formation of a layer, preventing dissolution. It was revealed that the changes in the films' oxygen contents during the hydration process affected the films' dielectric constants. The LAO films showed better hydration resistance characteristics, which are typically more suitable for conventional semiconductor manufacturing processes.

Original language	English
Pages (from-to)	957-960
Number of pages	4
Journal	Ceramics International
Volume	34
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2007.09.072
Publication status	Published - 2008 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2007.09.072

Cite this

@article{0caaccf90c2e49c480b525a12279d494,

title = "Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films",

abstract = "The properties of lanthanum oxide films and lanthanum aluminate films were investigated after dipping the films in DI-water. The La2O3 film showed rapid dissolution in DI-water and a swift decrease in thickness resulting in an increased leakage current density. The LAO film showed almost no changes in thickness due to the formation of a layer, preventing dissolution. It was revealed that the changes in the films' oxygen contents during the hydration process affected the films' dielectric constants. The LAO films showed better hydration resistance characteristics, which are typically more suitable for conventional semiconductor manufacturing processes.",

author = "Jun, {Jin Hyung} and Kim, {Hyo June} and Choi, {Doo Jin}",

year = "2008",

month = may,

doi = "10.1016/j.ceramint.2007.09.072",

language = "English",

volume = "34",

pages = "957--960",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

number = "4",

}

TY - JOUR

T1 - Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

AU - Jun, Jin Hyung

AU - Kim, Hyo June

AU - Choi, Doo Jin

PY - 2008/5

Y1 - 2008/5

N2 - The properties of lanthanum oxide films and lanthanum aluminate films were investigated after dipping the films in DI-water. The La2O3 film showed rapid dissolution in DI-water and a swift decrease in thickness resulting in an increased leakage current density. The LAO film showed almost no changes in thickness due to the formation of a layer, preventing dissolution. It was revealed that the changes in the films' oxygen contents during the hydration process affected the films' dielectric constants. The LAO films showed better hydration resistance characteristics, which are typically more suitable for conventional semiconductor manufacturing processes.

AB - The properties of lanthanum oxide films and lanthanum aluminate films were investigated after dipping the films in DI-water. The La2O3 film showed rapid dissolution in DI-water and a swift decrease in thickness resulting in an increased leakage current density. The LAO film showed almost no changes in thickness due to the formation of a layer, preventing dissolution. It was revealed that the changes in the films' oxygen contents during the hydration process affected the films' dielectric constants. The LAO films showed better hydration resistance characteristics, which are typically more suitable for conventional semiconductor manufacturing processes.

UR - http://www.scopus.com/inward/record.url?scp=42649092130&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42649092130&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2007.09.072

DO - 10.1016/j.ceramint.2007.09.072

M3 - Article

AN - SCOPUS:42649092130

SN - 0272-8842

VL - 34

SP - 957

EP - 960

JO - Ceramics International

JF - Ceramics International

IS - 4

ER -

Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this