Effect of (HfO2)X(Al2O3)1−X/SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices

Jinho Oh; Eun Jung Ko; Heedo Na; Dae Hong Ko; Hyunchul Sohn

doi:10.1007/s00339-016-9719-1

Effect of (HfO₂)_X(Al₂O₃)_1−X/SiO₂ double-layered blocking oxide on program and erase speed in charge trapping memory devices

Jinho Oh, Eun Jung Ko, Heedo Na, Dae Hong Ko, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, the effect of hole injection into the charge trap layers from channel prior to program operation is investigated in charge trapping (CT) memory with stacked blocking oxide (BO). For efficient hole injection, a (HfO₂)_X(Al₂O₃)_1−X/SiO₂ stacked BO structure is used. The CT memory device with stacked BO shows faster programming and erasing speed compared with single-layered SiO₂ BO. The enhanced programming speed is attributed to the enhanced electric field introduced by excess holes injected into SiN charge trap layer. In addition, efficient hole injection from channel produced the widened memory window in CT memory.

Original language	English
Article number	198
Pages (from-to)	1-5
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	122
Issue number	3
DOIs	https://doi.org/10.1007/s00339-016-9719-1
Publication status	Published - 2016 Mar 1

Bibliographical note

Publisher Copyright:
© 2016, Springer-Verlag Berlin Heidelberg.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

Access to Document

10.1007/s00339-016-9719-1

Cite this

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title = "Effect of (HfO2)X(Al2O3)1−X/SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices",

abstract = "In this work, the effect of hole injection into the charge trap layers from channel prior to program operation is investigated in charge trapping (CT) memory with stacked blocking oxide (BO). For efficient hole injection, a (HfO2)X(Al2O3)1−X/SiO2 stacked BO structure is used. The CT memory device with stacked BO shows faster programming and erasing speed compared with single-layered SiO2 BO. The enhanced programming speed is attributed to the enhanced electric field introduced by excess holes injected into SiN charge trap layer. In addition, efficient hole injection from channel produced the widened memory window in CT memory.",

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T1 - Effect of (HfO2)X(Al2O3)1−X/SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices

AU - Oh, Jinho

AU - Ko, Eun Jung

AU - Na, Heedo

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

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