Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure

Amithraj Valsaraj; Jiwon Chang; Leonard F. Register; Sanjay K. Banerjee

doi:10.1109/DRC.2014.6872310

Effect of HfO₂ and Al₂O₃ on monolayer MoS₂ electronic structure

Amithraj Valsaraj, Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Transition metal dichalcogenides (TMDs) are novel, and unlike graphene, gapped 2D materials with unique electrical and optical properties that are being explored for novel device applications. Their 2D nature also makes their properties sensitive to the surrounding environment. For example, a free standing monolayer of MoS₂ - which has an experimentally reported direct band gap of E_g ≈ 1.8 eV¹ - has a very low reported mobility (μ<3 cm²/(V-s)),² but exhibits significant enhancement of its mobility (μ∼200 cm²/(V-s)) when superposed with a high-k dielectric like HfO₂.³ Here, we study the effect of HfO₂ and Al₂O₃ on monolayer MoS₂ using density functional theory (DFT).

Original language	English
Title of host publication	72nd Device Research Conference, DRC 2014 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	87-88
Number of pages	2
ISBN (Print)	9781479954056
DOIs	https://doi.org/10.1109/DRC.2014.6872310
Publication status	Published - 2014
Event	72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States Duration: 2014 Jun 22 → 2014 Jun 25

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	72nd Device Research Conference, DRC 2014
Country/Territory	United States
City	Santa Barbara, CA
Period	14/6/22 → 14/6/25

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2014.6872310

Cite this

Valsaraj, A., Chang, J., Register, L. F., & Banerjee, S. K. (2014). Effect of HfO₂ and Al₂O₃ on monolayer MoS₂ electronic structure. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 87-88). [6872310] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872310

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title = "Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure",

abstract = "Transition metal dichalcogenides (TMDs) are novel, and unlike graphene, gapped 2D materials with unique electrical and optical properties that are being explored for novel device applications. Their 2D nature also makes their properties sensitive to the surrounding environment. For example, a free standing monolayer of MoS2 - which has an experimentally reported direct band gap of Eg ≈ 1.8 eV1 - has a very low reported mobility (μ<3 cm2/(V-s)),2 but exhibits significant enhancement of its mobility (μ∼200 cm2/(V-s)) when superposed with a high-k dielectric like HfO2.3 Here, we study the effect of HfO2 and Al2O3 on monolayer MoS2 using density functional theory (DFT).",

author = "Amithraj Valsaraj and Jiwon Chang and Register, {Leonard F.} and Banerjee, {Sanjay K.}",

year = "2014",

doi = "10.1109/DRC.2014.6872310",

language = "English",

isbn = "9781479954056",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "87--88",

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address = "United States",

note = "72nd Device Research Conference, DRC 2014 ; Conference date: 22-06-2014 Through 25-06-2014",

}

Valsaraj, A, Chang, J, Register, LF & Banerjee, SK 2014, Effect of HfO₂ and Al₂O₃ on monolayer MoS₂ electronic structure. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872310, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 87-88, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 14/6/22. https://doi.org/10.1109/DRC.2014.6872310

Effect of HfO₂ and Al₂O₃ on monolayer MoS₂ electronic structure. / Valsaraj, Amithraj; Chang, Jiwon; Register, Leonard F. et al.
72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 87-88 6872310 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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