Abstract
For the improvement of ArF photoresist removal performance, the effect of acetic acid (HAc) and isopropyl alcohol (IPA) in an ozonated water cleaning system was investigated by combining experimental and simulation results. The ArF photoresist removal rate increased by 6.8 times with an increase in HAc concentration in ozonated water vapor. With a higher ozone concentration, a lower hydroxyl radical (OḢ) concentration, and no reaction between photoresist by HAc observed, it is concluded that the improvement of the ArF photoresist removal rate with the addition of HAc results from a higher aqueous ozone concentration due to extended lifetime and a higher solubility of ozone due to the OḢ scavenging effect. The increase in IPA concentration in ozonated water vapor also improved the ArF photoresist removal rate by 12 times. Simulation results show that OḢ concentration was much lower than pure ozonated water, presumably due to a slower OḢ formation rate. ArF photoresist was removed at a relatively high speed in the vapor of IPA and water mixture even in the absence of aqueous ozone. Therefore, it is concluded that the improved photoresist removal rate with an IPA addition in ozonated water mainly results from the direct oxidation of photoresist by IPA itself.
| Original language | English |
|---|---|
| Pages (from-to) | D547-D550 |
| Journal | Journal of the Electrochemical Society |
| Volume | 155 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
